Spontaneous Growth of Nickel Silicide Nanowires and Formation of Self-Assembled Nanobridges by the Metal Induced Growth Method

Abstract

Nickel monosilicide (NiSi) nanowires (NWs) have been fabricated by the metal induced growth (MIG) method. Ni as a catalyst was deposited on a SiO2 coated Si wafer. In a DC magnetron sputtering system, the Ni reacts at 575°C with sputtered Si to give nanowires. Different metal catalysts (Co and Pd) were used to prove the MIG NW growth mechanism. NiSi NWs were a single crystal structure, 20-80 nm in diameter and 1-10 μm in length. The linear NW growth property provided nanobridge formation in a trenched Si wafer. The trenches in a Si wafer were made by dry etching and a simple, conventional metal lift off method. The self-assembled nanobridge can be applied to form nanocontacts at relatively low temperatures. The MIG NB is a promising 1 dimensional nanoscale building block to satisfy the need of ‘self and direct’ assembled ‘bottom-up’ fabrication concepts.

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References

  1. [1]

    Yu Huang, Xiangfeng Duan, Yi Cui, and Charles M. Lieber, Nano Letters 2 (2002) 101

    Google Scholar 

  2. [2]

    B. Erdem Alaca, H. Sehitoglu, and Taher Saif, Appl. Phys. Lett. 84 (2004), 4669.

  3. [3]

    Kirk J. Ziegler, D.M. Lyons, and Justin D. Holmes, Donats Erts, Boris Polyakov, Hakan Olin, Krister Svensson, and Eva Olsson, Appl. Phys. Lett. 84 (2004), 4047.

  4. [4]

    Christie R. K. Marrian, and D. M. Tennant, J. Vac. Sci. Technol. A 21 (2003), S207.

  5. [5]

    J. T. L Thong, C.H. Oon, M. Yeadon, and W.D. Zhang, Appl. Phys. Lett. 81 (2002), 4823.

  6. [6]

    C. A. Decker, R. Solanki, J. L. Freeouf, J. R. Carruthers, and D. R. Evans, Appl. Phys.Lett. 84 (2004), 1389.

  7. [7]

    K. Yakushiji, S. Mitani, K. Takanashi, S. Takahashi, S. Maekawa, H. Imamura, and H. Fujimori, Appl. Phys. Lett. 78 (2001), 515.

  8. [8]

    M Saif Islam, S Sharma, T I kamins, and R Stanley Williams. Nanotechnology. 15 (2004), L5.

  9. [9]

    Y. V. Nastaushev, T. Cavrilova, M.Kachanova, L.Nenasheva, V.Kolosanov, O.V. Naumova, V.P. Popov, and Assev, Mater. Sci. Eng. C 19 (2002), 189.

  10. [10]

    Joondong Kim, Wayne A. Anderson, Elena A. Guliants and Christopher E. Bunker, Morphological Changes while Growing Nickel Monosilicide Nanowires, Boston, U.S.A. Nov. 28 – Dec. 2, 2004, Materials Research Society Symposium Proceeding 854E (2004) U 5. 10.

  11. [11]

    Joondong Kim, and Wayne A. Anderson, Thin Solid Films, (In press).

  12. [12]

    M. Bartur and M-A. Nicolet, J. Appl. Phys. 54 (1983) 5404.

    CAS  Article  Google Scholar 

  13. [13]

    T.G. Finstad, J.W. Mayer, and M-A. Nicolet, Thin Solid Films 51 (1978) 391

  14. [14]

    Joondong Kim, Chunhai Ji, and Wayne A. Anderson, Silicon Nanowire Growth at Relatively Low Processing Temperature, San Francisco, U.S.A., April 12–16, 2004, Materials Research Society Symposium Proceeding 818 (2004) M 11. 11.

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Kim, J., Anderson, W.A. & Song, YJ. Spontaneous Growth of Nickel Silicide Nanowires and Formation of Self-Assembled Nanobridges by the Metal Induced Growth Method. MRS Online Proceedings Library 872, 72 (2005). https://doi.org/10.1557/PROC-872-J7.2

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