Energetic Neutral Atom Beam Lithography/Epitaxy for Nanoscale Device Fabrication

MRS Online Proceedings Library volume 872, Article number: 213 (2005) Cite this article

Abstract

Energetic neutral atom beam lithography/epitaxy (ENABLE) is a versatile technique recently developed for patterning nanoscale features into polymer substrates. ENABLE achieves the direct activation of surface chemical reactions by exposing substrates to a beam of energetic neutral atoms. Polymers that form volatile oxidation products may be anisotropically etched using a neutral beam of oxygen atoms at rates exceeding 100 nm/min, avoiding problems associated with charged species inherent to other etching techniques. We report on a top-down approach for producing high-aspect-ratio nanoscale structures in polymeric materials using ENABLE. Masking techniques suitable for ENABLE etching are discussed along with applications involving the rapid production of nanoscale features over large areas.

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Affiliations

  1. Chemistry Division, Los Alamos National Laboratory, 87545, Los Alamos, NM, U.S.A.

    Elshan A. Akhadov, Alexander H. Mueller & Mark A. Hoffbauer

Authors
  1. Elshan A. Akhadov
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  2. Alexander H. Mueller
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  3. Mark A. Hoffbauer
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Correspondence to Elshan A. Akhadov.

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Akhadov, E.A., Mueller, A.H. & Hoffbauer, M.A. Energetic Neutral Atom Beam Lithography/Epitaxy for Nanoscale Device Fabrication. MRS Online Proceedings Library 872, 213 (2005). https://doi.org/10.1557/PROC-872-J21.3

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