Abstract
Electron mobilities were studied as a function of thin-film growth conditions in hot wall epitaxially grown C60 based field-effect transistors. Mobilities in the range of ∼ 0.5 to 6 cm2/Vs are obtained depending on the thin-film morphology arising from the initial growth conditions. Moreover, the field-effect transistor current is determined by the morphology of the film at the interface with the dielectric, while the upper layers are less relevant to the transport. At high electric fields, a non-linear transport has been observed. This effect is assigned to be either because of the dominance of the contact resistance over the channel resistance or because of the gradual move of the Fermi level towards the band edge as more and more empty traps are filled due to charge injection.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. A. Rogers, Z. Bao, K. Baldwin, A. Dodabalapur, Brian Crone, V. R. Raju, V. Kuck, H. Katz, K. Amundson, J. Ewing, and P. Drzaic, Proc. Natl. Acad. Sci. 98, 4835 (2001).
H. E. A. Huitema, G. H. Gelinck, J. B. P. H. van der Putten, K. E. Kuijk, C. M. Hart, E. Cantatore, P. T. Herwig, A. J. J. M. van Breemen and D. M. de Leeuw, Nature 414, 599 (2001).
C. D. Sheraw, L. Zhou, J. R. Huang, D. J. Gundlach, T. N. Jackson, M. G. Kane, I. G. Hill, M. S. Hammond, J. Campi, B. K. Greening, J. Francl and J. West, Appl. Phys. Lett. 80, 1088 (2002).
A. R. Brown, C. P. Jarret, D. M. de Leeuw, M. Matters, Synth. Met. 88, 37 (1997).
B. K. Crone, A. Dodabalapur, R. Sarpeshkar, A. Gelperin, H. E. Katz, and Z. Bao, J. Appl. Phys. 91, 10140 (2001).
D. M. De Leew, G. H. Gelinck, T. C. T. Geuns, E. Van Veenendaal, E. Cantatore and B. H. Huisman, Int. Electron Device Meeting (IEDM) Tech. Dig. 293 (2002).
P. F. Baude, D. A. Ender, M. A. Haase, T. W. Kelley, D. V. Muyres, and S. D. Theiss, Appl. Phys. Lett. 82, 3964 (2003).
H. Klauk, M. Halik, U. Zschieschang, F. Eder, G. Schmid, and Ch. Dehm, Appl. Phys. Lett. 82, 4175 (2003).
K. S. Narayan and N. Kumar, Appl. Phys. Lett, 79, 1891 (2001).
R. Schroeder, L. A. Majewski and M. Grell, Adv. Mater. 16, 633 (2004); Th. B. Singh, N. Marjanović, G. J. Matt, N. S. Sariciftci, R. Schwödiauer and S. Bauer, Appl. Phys. Lett. 85, 5409 (2004).
V. C. Sundar, J. Zaumseil, V. Podzorov, E. Menard, R. L. Willett, T. Someya, M. E. Gershenson and J. A. Rogers, Science 303, 1644 (2004).
Y. -Y. Lin, D. J. Gundlach, S. F. Nelson and T. N. Jackson, IEEE Electron Devices Lett. 18, 606 (1997).
R. G. Kepler, Phys. Rev. 119, 1226 (1960).
S. Kobayashi, T. Takenobu, S. Mori, A. Fujiwara, and Y. Iwasa, Appl. Phys. Lett. 82, 4581 (2003).
Th. B. Singh, N. Marjanović, P. Stadler, M. Auinger, G. J. Matt, S. Günes, N. S. Sariciftci, R. Schwödiauer and S. Bauer, J. Appl. Phys. (in press)
Z. Bao, A. J. Lovinger and J. Brown, J. Am. Chem. Soc. 120, 207 (1998).
H. E. Katz, J. Johnson, A. J. Lovinger and W. Li, J. Am. Chem. Soc. 122, 7787 (2000).
R. J. Chesterfield, J. C. McKeen, Ch. R. Newman, C. D. Frisbie, P. C. Ewbank, K. R. Mann and L. L. Miller, J. Appl. Phys. 95, 6396 (2004).
P. R. L. Malenfant, C. D. Dimitrakopoulos, J. D. Gelorme, L. L. Kosbar and T. O. Graham, Appl. Phys. Lett. 80, 2517 (2002).
G. Horowitz, Ph. Lang, M. Mottaghi, and H. Aubin, Adv. Funct. Mater. 14, 1069 (2004).
F. Dinelli, M. Murgia, P. Levy, M. Cavallini, F. Biscarini and D. M. de Leeuw, Phys. Rev. Lett. 92, 116802 (2004).
R. Schwödiauer, G. S. Neugschwandtner, S. Bauer-Gogonea, S. Bauer and W. Wirges, Appl. Phys. Lett. 75, 3998 (1999).
A. Andreev, G. Matt, C. J. Brabec, H. Sitter, D. Badt, H. Seyringer and N. S. Sariciftci Adv. Mat. 12, 629 (2000).
D. Stifter and H. Sitter, Appl. Phys. Lett. 66, 679 (1995).
S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
G. Horowitz and P. Delannoy, J. Appl. Phys. 70, 469 (1991).
M. Koehler and I. Biaggio, Phys. Rev. B., 70, 045314 (2004).
V. D. Mihailetchi, J. K. J. van Duren, P. W. M. Blom, J. C. Hummelen, R. A. J. Janssen, J. M. Kroon, M. T. Rispens, W. J. H. Verhees and M. M. Wienk, Adv. Func. Mater. 13, 43 (2003);
G. J. Matt, N. S. Sariciftci and T. Fromherz, Appl. Phys. Lett. 84, 1570 (2004).
C. J. Brabec, A. Cravino, D. Meissner, N. S. Sariciftci, T. Fromherz, M. T. Rispens, L. Sanchez and J. C. Hummelen, Adv. Funct. Mater. 11, 374 (2001).
G. Horowitz, private communications.
E. J. Meijer, G. H. Gelinck, E. Van Veenendaal, B. H. Huisman, D. M. De Leeuw, T. M. Klapwijk, Appl. Phys. Lett., 82, 4576 (2003).
A. Rose, Phys. Rev. 97, 1538 (1955).
M. A. Lampart, Phys. Rev. 103, 1648 (1956).
W. Kalb, Ph. Lang, M. Mottaghi, H. Aubin, G. Horowitz and M. Wutting, Synth. Met., 146, 279 (2004).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Singh, T.B., Marjanovic, N., Matt, G.J. et al. Enhanced Mobility of Organic Field-Effect Transistors with Epitaxially Grown C60 Film by in-situ Heat Treatment of the Organic Dielectric. MRS Online Proceedings Library 871, 49 (2005). https://doi.org/10.1557/PROC-871-I4.9
Published:
DOI: https://doi.org/10.1557/PROC-871-I4.9