Abstract
Turn-on dynamics of polymer field effect transistors were examined experimentally over a wide timescale. We found that the source current dependence on time following switch on of the gate bias exhibits a power law at the short time range, and an exponential decay at the intermediate to long time range. We demonstrate that the transistor dynamic behavior is governed by the channel charge build-up, and can be described accurately by a simple capacitor-resistor distributed line model.
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References
Sze, S.M., Physics of Semiconductor Devices. 1981, New York: Wiley.
Burgi, L., R.H. Friend, and H. Sirringhaus, Applied Physics Letters, 2003. 82(9): p. 1482–1484.
Shaked, S., et al., Advanced Materials, 2003. 15(11): p. 913-+.
Tessler, N. and Y. Roichman, Applied Physics Letters, 2001. 79(18): p. 2987–2989.
Roichman, Y. and N. Tessler, Applied Physics Letters, 2002. 80(1): p. 151–153.
Meijer, E.J., et al., Applied Physics Letters, 2002. 80(20): p. 3838–3840.
Roichman, Y., Y. Preezant, and N. Tessler, Physica Status Solidi A-Applied Research, 2004. 201(6): p. 1246–1262.
Vissenberg, M. and M. Matters, Physical Review B, 1998. 57(20): p. 12964–12967.
Horowitz, G. and P. Delannoy, Journal of Applied Physics, 1991. 70(1): p. 469–475.
Roichman, Y. and N. Tessler, Synthetic Metals, 2003. 135(1–3): p. 443–444.
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Roichman, Y., Tessler, N. Turn-on and Charge Build-up Dynamics in Polymer Field Effect Transistors. MRS Online Proceedings Library 871, 47 (2005). https://doi.org/10.1557/PROC-871-I4.7
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DOI: https://doi.org/10.1557/PROC-871-I4.7