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Time Dependent Parallel Resistance in an Organic Schottky Contact

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Abstract

The DC characteristics of a Schottky contact between regioregular poly (3-hexylthiophene) and aluminum are studied in forward and reverse bias regimes. Current-voltage curves of the junction in reverse bias show a resistive path in parallel with the expected Schottky contact. This is the sign of a nonuniform junction between the metal and semiconductor that exhibits ohmic behavior in some regions. Reduction of this parallel resistance and degradation of the Schottky junction are observed over a period of two weeks. Accumulation of undesired ions in the polymer or diffusion of aluminum atoms into the semiconductor are two possible mechanisms which may explain the time dependent behavior of these Schottky junctions.

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Authors and Affiliations

  1. Electrical and Computer Engineering, The University of British Columbia (UBC), Vancouver, BC, V6T 1Z4, Canada

    Arash Takshi, John D. Madden & Chi Wah Eddie Fok

  2. Department of Physics and Astronomy, The University of British Columbia (UBC), Vancouver, BC, V6T 1Z1, Canada

    Mya Warren

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  1. Arash Takshi
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  2. John D. Madden
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  3. Chi Wah Eddie Fok
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  4. Mya Warren
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Takshi, A., Madden, J.D., Fok, C.W.E. et al. Time Dependent Parallel Resistance in an Organic Schottky Contact. MRS Online Proceedings Library 871, 335 (2005). https://doi.org/10.1557/PROC-871-I3.35

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  • DOI: https://doi.org/10.1557/PROC-871-I3.35

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