Molecular Dielectric Multilayers for Ultra-Low-Voltage Organic Thin Film Transistors


Very thin (2.3 – 5.5 nm) self-assembled organic dielectric multilayers have been integrated into organic thin-film transistor (OTFT) structures to achieve sub-1 V operating characteristics. These new dielectrics are fabricated via layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well-defined, strongly-adherent, thermally stable, virtually pinhole-free, organosiloxane thin films having exceptionally large electrical capacitances (400-700 nFcm-2). These multilayers enable OTFT function at very low source-drain, gate, and threshold voltages, and are compatible with a broad variety of vapor- or solution-deposited p- and n-channel organic semiconductors.


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Yoon, MH., Facchetti, A. & Marks, T.J. Molecular Dielectric Multilayers for Ultra-Low-Voltage Organic Thin Film Transistors. MRS Online Proceedings Library 871, 32 (2005).

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