Effective Dopant Analysis for the High Performance Poly(3-Hexylthiophene) Field-Effect Transistors

MRS Online Proceedings Library volume 871, Article number: 318 (2005) Cite this article

Abstract

The relationship between impurity species included in regioregular poly(3-hexylthiophene) (P3HT) and the field effect transistors (FETs) property was investigated. P3HT synthesized by the Rieke method contained only Zn, Ni and Br (free halogen) as impurities. Several kinds of P3HT with different purities by using purification techniques were prepared, and those P3HT-FETs properties were estimated. As a result, it is revealed that the free halogen is effective dopant to increase the FET mobility, and the removal of the catalyst metal (Zn and Ni) is also effective to decrease off-current.

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Affiliations

  1. R&D Center, RICOH, 16-1 Shinei-cho, Tsuzuki-ku, Yokohama, 224-0035, Japan

    Shinichi Kawamura

  2. Optoelectronic Industry and Technology Development Association (OITDA), Sekiguchi, Bunkyo-ku, Tokyo, 112-0014, Japan

    Shinichi Kawamura

  3. National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan

    Manabu Yoshida, Satoshi Hoshino & Toshihide Kamata

Authors
  1. Shinichi Kawamura
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  2. Manabu Yoshida
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  3. Satoshi Hoshino
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  4. Toshihide Kamata
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Kawamura, S., Yoshida, M., Hoshino, S. et al. Effective Dopant Analysis for the High Performance Poly(3-Hexylthiophene) Field-Effect Transistors. MRS Online Proceedings Library 871, 318 (2005). https://doi.org/10.1557/PROC-871-I3.18

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