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High-Temperature Operation of Pentacene Field-Effect Transistors with Polyimide Gate Insulators

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Abstract

We have fabricated pentacene field-effect transistors (FETs) on polyimide-sheet films with polyimide gate dielectric layers and parylene encapsulation layer, and investigated the high-temperature performance. It is found that the mobility of encapsulated FETs is enhanced from 0.5 to 0.8 cm2/Vs when the device is heated from room temperature to 160°C under light-shielding nitrogen environment. Furthermore, after the removal of annealing temperatures up to 160°C, the transistor characteristic of mobility and on/off current ratio show no significant changes, demonstration the excellent thermal stability of the present organic FETs.

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Authors and Affiliations

  1. Quantum-Phase Electronics Center, School of Engineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan

    Tsuyoshi Sekitani, Shingo Iba, Yusaku Kato, Yoshiaki Noguchi & Takao Someya

  2. Center for Collaborative Research, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan

    Takayasu Sakurai

Authors
  1. Tsuyoshi Sekitani
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  2. Shingo Iba
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  3. Yusaku Kato
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  4. Yoshiaki Noguchi
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  5. Takao Someya
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  6. Takayasu Sakurai
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Sekitani, T., Iba, S., Kato, Y. et al. High-Temperature Operation of Pentacene Field-Effect Transistors with Polyimide Gate Insulators. MRS Online Proceedings Library 871, 19 (2005). https://doi.org/10.1557/PROC-871-I1.9

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  • DOI: https://doi.org/10.1557/PROC-871-I1.9

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