Two level metal structures were fabricated to test the efficacy of using an organic low K etch stop layer (OESL) in order to lower the effective dielectric constant for intralayer capacitance. The organic etch stop layer’s intrinsic capacitance of 3.3 compares with that of silicon carbide (∼ 5) which constitutes the control of the experiment. This reduction represents a reduction of effective dielectric constant for the stack of about 10% to about 3.0. The process was optimized so as to achieve yield of via chains of a million 130 nm diameter vias, and effective K was measured. The target of 3.0 was achieved using this process. Interpenetration of the organic etch stop with the MSQ porous low K material was observed.
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Y. Furukawa, T. Kokubo, H. Struyf, M. Maenhoudt, S. Vanhaelemeersh, D. Gravesteijn, “Dual Damascene Patterning for Full Spin-on Stack of Porous Low-K Material”, (Proc. IEEE 2002 IITC), pp.45–47.
R. McGowan, D. Wang, P. J. Wolf, “Integration of an Ultra Low-K Dielectric an a 300 mm 130 nm Trench First Dual Damascene Etch Process”, AVS 51st International Symposium, November, 2004.
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Smith, G.C., Henis, N., McGowan, R. et al. Integration of a Polymer Etch Stop Layer in a Porous Low K MLM Structure. MRS Online Proceedings Library 863, B2.11 (2004). https://doi.org/10.1557/PROC-863-B2.11