One-dimensional silicon nanowire structures have been successfully made by using the proximity and accumulation effects of electron-beam (e-beam) lithography. Wire structures are fabricated in a thin poly silicon layer on a silicon substrate with a 400 nm buried SiO2. Measurements of the current-voltage characteristics at various temperatures from 4 K up to 300 K show significant nonlinearities and single-electron effect behavior. The blockade size is significantly affected by thermal effects, oscillations of the blockade, and the conductivity dependence on the gate potential.
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L. Zhuang, L. Guo, and S. Y. Chou, Appl. Phys. Lett. 72, 1205 (1998).
H. Ishikuro and T. Hiramoto, Appl. Phys. Lett. 71, 3691 (1997).
H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, T. Hiramoto, and T. Ikoma, Appl. Phys. Lett. 68, 3585 (1996).
N. Takahashi, H. Ishikuro and T. Hiramoto, Appl. Phys. Lett. 76, 209 (2000).
N. J. Stone and H. Ahmed, Electron. Lett. 35, 1883 (1999).
Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Muras, Appl. Phys. Lett. 76, 3121 (2000).
A. Nakajama, T. Futatsugi, K. Kosemura, T. Fukano, and N. Yokoyama, Appl. Phys. Lett. 70, 1742 (1997).
A.C. Irvine, Z. A. K. durrani, and H. Ahmed, J. appl. Phys. 87, 8594 (2000).
K. Liu, Ph. Avouris, J. Bucchignano, R. Martel, S. Sun and J. Michl, Appl. Phys. Lett. 80, 865 (2002).
G. Hashiguchi and H. Mimura, Jpn. J. Appl. Phys., Part 2 33, L1649 (1994)
F. R. Waugh, M. J. Berry, D. J. Mar, R. M. Westervelt, K. L. Champman, and A. C. Gossard, Phys. Rev. Lett. 75, 705 (1995).
H. O. Muller, D. A. Williams, H. mizuta, Z. A. K. Durrani, Mater. Sci. Eng. B 74, 36–39 (2000).
R. A. Smith, H. Ahmed, J. Appl. Phys. 81, 2699–2703 (1997).
Transport in nanostructures, edited by D. K. Ferry, S. M. Goodniik (Cambridge University press, 1997).
This work was performed under the contract number NSC93-2112-M-492-002 supported by the National Science Council, Republic of China. Technical supports from the members at National Nano Device Laboratories are acknowledged.
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Hu, S., Sung, C. Fabrication of One-dimensional Silicon Nano-wires Based on Proximity Effects of Electron-beam Lithography. MRS Online Proceedings Library 862, 86 (2004). https://doi.org/10.1557/PROC-862-A8.6