Light-Intensity Dependence of the Staebler-Wronski Effect in a-Si:H with Various Densities of Defects

MRS Online Proceedings Library volume 862, Article number: 71 (2004) Cite this article

Abstract

The light-intensity dependence of the photocreation of dangling bonds (DBs) were investigated for a-Si:H films with increasing density of defects before light soaking. Samples in which the density of neutral DBs had been increased by annealing at 400 C for 1 h exhibited a weak light-intensity dependence of the photocreated DBs compared to that for the as-deposited sample. Furthermore, the sample which had been illuminated with a light intensity of 1 W/cm2 for 1 h also showed a weak dependence. The results can be qualitatively explained by using rate equations for the densities of DBs and floating bonds (FBs) based on the FB-mediated photocreation of DBs. When both the densities of DBs and FBs before illumination increase, the light-intensity dependence of the DB density for a moderate value of the illumination time becomes weaker, qualitatively consistent with the observed results.

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Affiliations

  1. Division of Electrical Engineering and Computer Science, Graduate School of Natural Science & Technology, Kanazawa University, Kanazawa, 920-8667, Japan

    Minoru Kumeda, Ryohei Sakai & Akiharu Morimoto

  2. NTT Microsystem Integration Labs, Atsugi, 243-0198, Japan

    Tatsuo Shimizu

Authors
  1. Minoru Kumeda
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  2. Ryohei Sakai
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  3. Akiharu Morimoto
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  4. Tatsuo Shimizu
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Correspondence to Minoru Kumeda.

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Kumeda, M., Sakai, R., Morimoto, A. et al. Light-Intensity Dependence of the Staebler-Wronski Effect in a-Si:H with Various Densities of Defects. MRS Online Proceedings Library 862, 71 (2004). https://doi.org/10.1557/PROC-862-A7.1

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