GaAs Growth on Micro and Nano Patterned Ge/ Si1-XGeX and Si Surfaces

Abstract

We show heteroepitaxial growth of GaAs on Ge/SiGe grown on nanometer-scale grating structures. Conventional lithography techniques were combined with reactive ion and wet-chemical etching to fabricate 1-D patterns of silicon posts. The quality of the GaAs layers was investigated using high-resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), photoluminescence (PL) and etch pit density (EPD) measurements. Our results show significant improvement in the quality of heteroepitaxial layers grown on nano patterned structures compared to those on the unpatterned silicon. The optical quality of the GaAs/Ge/SiGe on nano-scale patterned silicon was comparable to that of single crystal GaAs.

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References

  1. 1

    M. E. Groenert, C. W. Leitz, A. J. Pitera, V. Yang, H. Lee, R. J. Ram, and E. A. Fitzgerald, J. Appl. Phys. 93, 362 (2003).

    CAS  Article  Google Scholar 

  2. 2

    S. A. Ringel, J. A. Carlin, C. A. Andre, D. M. Wilt, E. B. Clark, P. Jenkins, D. Scheiman, C. W. Leitz, A. A. Allerman, and E. A. Fitzgerald, Prog. Photovoltaics 10, 417 (2002).

    CAS  Article  Google Scholar 

  3. 3

    G. Masini, L. Colace and G. Assanto, Appl. Phys. Lett. 82, 2524 (2003)

    CAS  Article  Google Scholar 

  4. 4

    J. Oh, et al., IEEE Jour. Quan. Elect. 38, 1238 (2002).

    CAS  Article  Google Scholar 

  5. 5

    L. Colace, G. Masini, F. Galluzzi, G. Assanto, G. Capellini, L. Di Gaspare, E. Palange, and F. Evangelisti, Appl. Phys. Lett. 72, 3175 (1998).

    CAS  Article  Google Scholar 

  6. 6

    R. Calarco, et al., Thin Solid Films 391, 138 (2001).

    CAS  Article  Google Scholar 

  7. 7

    R. M. Sieg, J. A. Carlin, J. J. Boeckl, S. A. Ringel, M. T. Currie, S. M. Ting, T. A. Langdo, G. Taraschi, E. A. Fitzgerald, B. M. Keyes, Appl. Phys. 73, 3111 (1998).

    CAS  Google Scholar 

  8. 8

    Y. Chriquia, L. Largeaua, G. Patriarchea, G. Saint-Gironsa, S. Bouchoulea, I. Sagnesa, D. Bensahelb, Y. Campidellib, O. Kermarrecb, Journal of Crystal Growth 265, 53 (2004).

    Article  Google Scholar 

  9. 9

    J. A. Carlina) and S. A. Ringel, E. A. Fitzgerald, M. Bulsara, B. M. Keyes, Appl. Phys. 76, 3111 (2000).

    Google Scholar 

  10. 10

    S. M. Ting and E. A. Fitzgerald, J. Appl. Phys. 87, 2618 (2000).

    CAS  Article  Google Scholar 

  11. 11

    K. Ismail, B. S. Meyerson, and P. J. Wang, Appl. Phys. Lett. 58, 2117 (1991).

    CAS  Article  Google Scholar 

  12. 12

    K. Nozawa and Y. Horikoshi, Jpn J. Appl. Phys. 28, L668 (1991).

    Article  Google Scholar 

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Correspondence to Ganesh Vanamu.

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Vanamu, G., Datye, A.K., Dawson, R.L. et al. GaAs Growth on Micro and Nano Patterned Ge/ Si1-XGeX and Si Surfaces. MRS Online Proceedings Library 862, 69 (2004). https://doi.org/10.1557/PROC-862-A6.9

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