High Efficiency Solar Cells with Intrinsic Microcrystalline Silicon Absorbers Deposited at High Rates by VHF-PECVD

Abstract

Intrinsic microcrystalline silicon (μc-Si:H ) was prepared at high deposition rates (RD) by very high frequency plasma-enhanced chemical vapor deposition (PECVD) working at high-pressure high-power (hphP). The material has similar electrical and optical properties as uc-Si:H material deposited at low rates by low-pressure low-power PECVD, apart from a more pronounced structure in-homogeneity along the growth axis for material deposited on glass substrates. With optimized deposition conditions high efficiency solar cells can be grown with deposition rates of up to 15 Å/s without deterioration of the performance as a function of RD. A high conversion efficiency of 9.8 % was obtained for a single junction μc-Si:Hp-i-n solar cell at a deposition rate of RD = 11 Å/s.

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References

  1. 1

    F. Finger, P. Hapke, M. Luysberg, R. Carius, H. Wagner, and M. Scheib, Appl. Phys. Lett. 65, 2588 (1994).

    CAS  Article  Google Scholar 

  2. 2

    O. Vetterl, F. Finger, R. Carius, P. Hapke, L. Houben, O. Kluth, A. Lambertz, A. Mück, B. Rech, and H. Wagner, Sol. Energ. Mat. Sol. C. 62, 97 (2000).

    CAS  Article  Google Scholar 

  3. 3

    H. Keppner, J. Meier, P. Torres, D. Fischer, and A. Shah, Appl. Phys. A: Mater. Sci. Process. 69, 169 (1999).

    CAS  Article  Google Scholar 

  4. 4

    L. Guo, M. Kondo, M. Fukawa, K. Saitoh, and A. Matsuda, Jpn. J. Appl. Phys. 37, L1116 (1998).

    CAS  Article  Google Scholar 

  5. 5

    T. Roschek, T. Repmann, J. Müller, B. Rech, and H. Wagner, J. Vac. Sci. Technol. A 20, 492 (2002).

    CAS  Article  Google Scholar 

  6. 6

    M. Fukawa, S. Suzuki, L. Guo, M. Kondo, and A. Matsuda, Sol. Energ. Mat. Sol. C. 66, 217, (2001).

    CAS  Article  Google Scholar 

  7. 7

    T. Matsui, M. Kondo, and A. Matsuda, Jpn. J. Appl. Phys., Part II: Letters 42, L901 (2003).

    CAS  Article  Google Scholar 

  8. 8

    Y. Mai, S. Klein, X. Geng, and F. Finger, Appl. Phys. Lett. 85, 2839 (2004).

    CAS  Article  Google Scholar 

  9. 9

    S. Klein, J. Wolff, F. Finger, R. Carius, H. Wagner, and M. Stutzmann, Jpn. J. Appl. Phys., Part II: Letters 41, L10 (2002).

    CAS  Article  Google Scholar 

  10. 10

    O. Kluth, B. Rech, L. Houben, S. Wieder, G. Schöpe, C. Beneking, H. Wagner, A. Löffl, and H.W. Schock, Thin Solid Films 351, 247 (1999).

    CAS  Article  Google Scholar 

  11. 11

    H. Wagner, W. Beyer, Solid State Comm. 48, 585 (1983).

    CAS  Article  Google Scholar 

  12. 12

    W. Beyer and M. S. Abo Ghazala, MRS Symposium Proceeding 507, 601 (1998).

    Article  Google Scholar 

  13. 13

    F. Finger, R. Carius, T. Dylla, S. Klein, S. Okur, M. Günes, IEE Proceedings Circuits, Devices and Systems 150, 300 (2003).

    Article  Google Scholar 

  14. 14

    Y. Mai, S. Klein, F. Finger, R. Carius, J. Wolff, A. Lambertz, and X. Geng, unpublished.

  15. 15

    R. Carius, unpublished.

  16. 16

    C. Ross, Y. Mai, R. Carius, and F. Finger, this conference.

  17. 17

    S. Klein, F. Finger, R. Carius, H. Wagner, and M. Stutzmann, Thin Solid Films 395, 305 (2001).

    CAS  Article  Google Scholar 

Download references

Acknowledgments

The authors thank F. Birmans, M. Hülsbeck, J. Klomfaß, S. Michel, W. Reetz, G Schöpe, B. Sehrbrock, H. Siekmann, H. Stiebig, and C. Zahren for their constructive contribution to this work.

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Correspondence to Yaohua Mai.

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Mai, Y., Klein, S., Carius, R. et al. High Efficiency Solar Cells with Intrinsic Microcrystalline Silicon Absorbers Deposited at High Rates by VHF-PECVD. MRS Online Proceedings Library 862, 232 (2004). https://doi.org/10.1557/PROC-862-A23.2

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