Skip to main content
Log in

Low Hydrogen Concentration Silicon Nitride as a Gate Dielectric of TFTs for Flexible Display Application

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

We have proposed low hydrogen concentration (CH) silicon nitride (SiNX) as a dielectric for flexible display application. The fabrication temperature on plastic substrate is limited below Tg(glass transition temperature, typically 130~180 oC) and it was reported that Ch in thin film is strongly depends on fabrication temperature. As the fabrication temperature is decreasing, hydrogen concentration is increasing. SiNX deposited in ultra low temperature (< 150 oC) has high CH which is porous, low density. Our experimental results using SiH4, He, N2 gas mixture shows that in the SìNx Ch is less than 15 at.%. Breakdown voltage of proposed SìNx dielectric is 5 MV/cm. In the wet etch rate test using a nitride etching solution, He dilution is more dense than NH3 dilution. This process approach is useful for flexible display application.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. H. Gleskova, S. Wagner, V. Gasparik and P. Kovac, Applied Surface Science 175-176, 12–16 (2001).

    Google Scholar 

  2. C. -S. Yang, L. L. Smith, C. B. Arthur and G.N. Parsons, J. Vac. Sci. Technol. B 18(2), 683, (2000).

    Google Scholar 

  3. G.-R. Yang, Y-P. Zhao, Y.Z. Hu, T. Paul Chow and Ronald J. Gutmann, Thin Solid Films 333, 219–223, (1998).

    Google Scholar 

  4. Tonya M. Klein, Timothy M. Anderson, Ashfaqul I. Chowdhury and Gregory N. Parsons, J. Vac. Sci. Technol. A 17 (1), 108, (1999).

    Google Scholar 

  5. Denis Stryahilev, Andrei Sazonov and Arokia Nathan, J. Vac. Sci. Technol. A 20 (3), 1087, (2002).

    Google Scholar 

  6. Andrei Sazonov, Arokia Nathan and Denis Striakhilev, J. Non-Cryst. Sol. 266-269, 1329–1334, (2000).

    Google Scholar 

  7. W. A. Lanford and M. J. Rend, J. Appl. Phys. 49 (4), 2473, (1978).

    Google Scholar 

  8. J.W. Lee, K.D. Machenzie, D. Johnson, J.N. Sasserath, S.J. Perton and F. Ren, J. electochemcal Soc. 147, 1481, (2000).

    Google Scholar 

  9. S.H. Lee, I. Lee and J. Yi, Surface and Coating Technology 153, 67–71, (2002).

    Google Scholar 

  10. I. Jonak-Auer, R. Meisels and F. Kuchar, Infrared Physics & Technology 38, 223–226, (1997).

    Google Scholar 

  11. Ray Chow, W. A. Lanford, Wang Ke-Ming and Richard S. Roaler, J. appl. Phys. 53 (8), 5630, (1982).

    Google Scholar 

  12. A. J. Flewitt, A. P. Dyson, J. Robertson and W. I. Milne, Thin Solid Films 383, 172–177, (2001).

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Park, J.H., Kim, C.Y., Shin, K.S. et al. Low Hydrogen Concentration Silicon Nitride as a Gate Dielectric of TFTs for Flexible Display Application. MRS Online Proceedings Library 862, 226 (2004). https://doi.org/10.1557/PROC-862-A22.6

Download citation

  • Published:

  • DOI: https://doi.org/10.1557/PROC-862-A22.6

Navigation