Major development challenges in application of hydrogenated amorphous silicon (a-Si:H) technology to large area digital X-ray imaging and technological attributes such as low temperature deposition and high uniformity over large area evolve around dynamic imaging modalities such as fluoroscopy, which demands both high speed readout and signal amplification capabilities in addition to long term device stability. This work reports on initial results of a variety of TFT active pixel sensor (APS) structures in a-Si:H technology, each demonstrating unique capabilities such as enhancements in signal gain, TFT threshold voltage immunity, and real-time high speed readout.
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This work is supported by the Natural Sciences and Engineering Research Council (NSERC) of Canada.
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Lai, J., Safavian, N., Nathan, A. et al. Active Pixel TFT Arrays for Digital Fluoroscopy in a-Si:H Technology. MRS Online Proceedings Library 862, 224 (2004). https://doi.org/10.1557/PROC-862-A22.4