Ultra-Shallow Junction Formation by a Non-Melting Process; Double-Pulsed Green Laser Annealing


In order to investigate the possibility of nanosecond activation in the non-melting state, we adopted the method of double-pulsed green laser annealing (DPSS), controlling effectively the combined pulse width with two pulsed lasers (pulse duration: ~100ns, frequency: 1kHz). We investigated the formation of ultra-shallow junctions (USJ) less than 10nm in spite of the deep penetration depth of the green wavelength in crystalline Si (~1000nm). In order to limit the depth of B implant, a Ge pre-amorphization implant was performed at an energy of 3keV to a dose of 3E+14/cm2. After the pre-amorphization implant, a B implant was performed at 0.2kev and doses of 5E+14/cm2 and 1E+15/cm2. The implanted B dopants remain within the pre-amorphized Si layer. The double-pulsed laser irradiation was performed with a homogenized line beam of 0.1mm × 17mm, scanning a sample stage at a constant velocity of 10mm/s, that is, at an overlap ratio of 90%. The non-melting state was found to be in the pulse energy density range of E ≤ 780mJ/cm2 at a delay time of 300ns. Overcoming the issues of the short annealing time (< 1μs) and the deep penetration depth (~1000nm), we succeeded in the ultra-shallow junction formation beyond the 45nm CMOS node: maximum junction depth of 6nm, minimum sheet resistance of 0.65kohm/sq at a B dose of 1E+15/cm2, an abruptness of 1.4nm/dec.

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  1. 1

    R. Lindsay et al, IEEE, p.70, March 2004

    Google Scholar 

  2. 2

    T. Ito et al, 2003 Symposium on VLSI Technology Digest, p. 53, June 2003.

    Google Scholar 

  3. 3

    L. M. Feng, Y. Wang, and S. Talwar, Semiconductor Manufacturing, p44, December 2004.

    Google Scholar 

  4. 4

    S. Talwar, S. B. Felch, D. F. Downey, Y. Wang, 2000 International Conference on Ion Implantation Technology Proceedings, IEEE, p.175 (2000).

    Google Scholar 

  5. 5

    K. Yamazaki et al, AM-LCD2002 Digest, p.149 (2002).

    Google Scholar 

  6. 6

    S. Talwar, D. Markle and M. Thompson, Solid State Technology, p83, July 2003.

    Google Scholar 

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We would like to thank T. Sasaki for supporting this work and encouraging us. The assistance of H. Komori in the annealing of samples is greatly appreciated.

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Correspondence to Toshio Kudo.

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Kudo, T., Sakuragi, S. & Yamazaki, K. Ultra-Shallow Junction Formation by a Non-Melting Process; Double-Pulsed Green Laser Annealing. MRS Online Proceedings Library 862, 217 (2004). https://doi.org/10.1557/PROC-862-A21.7

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