Ge Growth on Nanostructured Silicon Surfaces

Abstract

We report highest quality Ge epilayers on nanoscale patterned Si structures. 100% Ge films of 10 μm are deposited using chemical vapor deposition. The quality of Ge layers was examined using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and high-resolution x-ray diffraction (HRXRD) measurements. The defect density was evaluated using etch pit density measurements. We have obtained lowest dislocation density (5×105 cm−2) Ge films on the nanopatterned Si structures. The full width half maximum peaks of the reciprocal space maps of Ge epilayers on the nanopatterned Si showed 93 arc sec. We were able to get rid of the crosshatch pattern on the Ge surface grown on the nanopatterned Si. We also showed that there is a significant improvement of the quality of the Ge epilayers in the nanopatterned Si compared to an unpatterned Si. We observed nearly three-order magnitude decrease in the dislocation density in the patterned compared to the unpatterned structures. The Ge epilayer in the patterned Si has a dislocation density of 5×105 cm−2 as compared to 6×108 cm−2 for unpatterned Si.

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Correspondence to Ganesh Vanamu.

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Vanamu, G., Datye, A.K. & Zaidi, S.H. Ge Growth on Nanostructured Silicon Surfaces. MRS Online Proceedings Library 862, 26 (2004). https://doi.org/10.1557/PROC-862-A2.6

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