We have studied silicon films grown epitaxially on silicon wafers using hot-wire chemical vapor deposition (HWCVD) with a tantalum filament. Silicon films were grown on (100)-oriented hydrogen terminated silicon wafers at temperatures from 175°C to 480°C, using a Ta filament 5 cm from the substrate to decompose pure SiH4 gas. The progression of epitaxy was monitored using real-time spectroscopic ellipsometry (RTSE). Analysis using RTSE, transmission electron microscopy (TEM), and scanning electron microscopy shows that at a characteristic thickness, hepi all of the films break down into a-Si:H cones. Below 380°C, both hepi and the thickness of the transition to pure a-Si:H increase with increasing temperature. Above 380°C, hepi was not observed to increase further but TEM images show fewer defects in the epitaxial regions. Secondary ion-mass spectrometry shows that the oxygen concentration remains nearly constant during growth (<1018 cm−3). The hydrogen concentration is found to increase substantially with film thickness from 5•1018 to 5•1019 cm−3, likely due to the incorporation of hydrogen into the a-Si:H cones that grow after the breakdown of epitaxy.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
D.J. Eaglesham, H.J. Gossmann and M. Cerullo, Phys. Rev. Lett. 65, 1227 (1990).
C. Rosenblad, H.R. Deller, A. Dommann, T. Meyer, P. Schroeter and H. von Kanel, Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films 16, 2785 (1998).
B. Rau, I. Sieber, B. Selle, S. Brehme, U. Knipper, S. Gall and W. Fuhs, Thin Solid Films 451-52, 644 (2004).
J. Schwarzkopf, B. Selle, W. Bohne, J. Rohrich, I. Sieber and W. Fuhs, J. of Appl. Phys. 93, 5215 (2003).
H. Seitz and B. Schroder, Solid State Commun. 116, 625 (2000).
J. Thiesen, E. Iwaniczko, K.M. Jones, A. Mahan and R. Crandall, Appl. Phys. Lett. 75, 992 (1999).
M.S. Mason, C.M. Chen and H.A. Atwater, Thin Solid Films 430, 54 (2003).
Q. Wang, M.R. Page, X.Q. Xu, E. Iwaniczko, E. Williams and T.H. Wang, Thin Solid Films 430, 208 (2003).
R.B. Bergmann, C. Zaczek, N. Jansen, S. Oelting and J.H. Werner, Appl. Phys. Lett. 72, 2996 (1998).
R.W. Collins and A.S. Ferlauto, Current Opinion in Solid State & Materials Science 6, 425 (2002).
S. Kim and R.W. Collins, Appl. Phys. Lett. 67, 3010 (1995).
C.W. Teplin, E. Iwaniczko, J.D. Perkins, D.H. Levi, K.M. Jones, and H.M. Branz, accepted for publication in J. of Appl. Phys.
D.J. Eaglesham, J. of Appl. Phys. 77, 3597 (1995).
M. Nerding, L. Oberbeck, T.A. Wagner, R.B. Bergmann and H.P. Strunk, J. of Appl. Phys. 93, 2570 (2003).
M.J. Binns, S.A. McQuaid, R.C. Newman and E.C. Lightowlers, Semiconductor Science And Technology 8, 1908 (1993).
Note that cross sections that do not cut directly through the nucleation point of a cone appear as hyperbolas and seem to have larger growth angles.
H. Jorke, H.J. Herzog and H. Kibbel, Phys. Rev. B. 40, 2005 (1989).
J. Thiesen, H.M. Branz and R.S. Crandall, Appl. Phys. Lett. 77, 3589 (2000).
The authors would like to thank Dean Levi, Dick Crandall, Qi Wang, and Paul Stradins for useful discussions. This work is supported by the U.S. DOE under Contract #DE-AC36 -99G010337.
About this article
Cite this article
Teplin, C.W., Iwaniczko, E., Jones, K.M. et al. Silicon homoepitaxy using tantalum-filament hot-wire chemical vapor deposition. MRS Online Proceedings Library 862, 23 (2004). https://doi.org/10.1557/PROC-862-A2.3