Nanocrystalline silicon (nc-Si) films were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at 150°C. ICP power was 400W. The process gas was SiH4 diluted with He as well as H2. The flow rate of He, H2 and He/H2 mixture was varied from 20sccm to 60sccm and that of SiH4 was 3sccm. X-ray diffraction (XRD) patterns of the nc-Si films were measured. From the XRD results of nc-Si films deposited by ICP-CVD, the properties of Si film deposited under each condition were studied. As the dilution ratio increases and He/H2 mixture was used as a dilution gas, intensities of <111> and <220> peaks were increased and the incubation layer was thin. These results were explained in the point of role of H2 plasma and He plasma in the nc-Si deposition process. Our experimental results show that nc-Si film deposited by ICP-CVD may be suitable for an active layer of nc-Si TFTs.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
Masashi Goto, et al, Jpn. J. Appl. Phys. Vol.36, pp.3714–3720 (1997).
J. Hopwood, Plasma Sources Sci. Technol. 862, 109 (1992).
J. H. Keller, Plasma Sources Sci. Technol. 5, 166 (1996).
Michio Kondo, et al, Thin Solid Films, 430, pp.130–134 (2003).
H. Kakinuma, et al, J. Appl. Phys., Vol. 70 (12), pp.7374–7381 (1991).
R. Bisaro, et al, J. Appl. Phys., Vol. 59 (4), pp.1167–1178 (1986).
S. M. Han, et al, Proceedings of the IDW, pp.505–506 (2004).
J. C. Knights and R. A. Lujan, Appl. Phys. Lett., Vol. 35, 244 (1979).
K. Nomoto, et al, Jpn. J. Appl. Phys., Vol. 29, 1372 (1990).
S. Veprek, J. Chem, Phys., Vol. 56, 952 (1972).
M. Otobe, et al, Jpn. J. Appl. Phys., Vol. 31, 533 (1992).
N. Shibata, et al, Mat. Res. Soc. Symp. Proc., Vol. 64, 1024 (1994).
John L. Vossen, Werner Kern, “Thin Film Processes II, Academic Press (1991).
C. Mukherjee, et al, J. Vac. Sci. Technol., A, 17 (6), pp. 3202–3208 (1999).
About this article
Cite this article
Han, SM., Park, JH., Lee, HJ. et al. Nanocrystalline-Si Thin Film Deposited by Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) at 150°C. MRS Online Proceedings Library 862, 199 (2004). https://doi.org/10.1557/PROC-862-A19.9