A novel plasma hydrogenation method for the fabrication of nano-crystalline structures of silicon as well as the photoluminescence and structural properties of these porous structures is presented. We have observed that the hydrogenation process followed by an annealing treatment results in the formation of nano-crystalline silicon structures where increased temperatures during hydrogenation reduces the grain size. Furthermore, by increasing the time of the hydrogenation process, the density of the silicon grains is increased. Photoluminescence (PL) spectroscopy demonstrated the presence of a direct gap in the visible light range where materials with a smaller grain size emitted light at lower wavelengths, and a higher density of grains resulted in higher amplitudes in the PL spectrum. TEM and SEM characterization of these samples and the structure-emission relationship are also presented.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
L.T. Canham; “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers”; Appl. Phys. Lett. 57 (1990) 1046.
S. Aouida, M. Saadoun, M.F. Boujmil, M. Ben Rabha, B. Bessai̤s; “Effect of UV irradiations on the structural and optical featuresof porous silicon: application in silicon solar cells”; Applied Surface Science 238 (2004) 193–198.
K.D. Hirschman, L. Tsybeskov, S.P. Duttagupta and P.M. Fauchet, “Silicon-based Visible Light- Emitting Devices Integrated Into Microelectronic Circuits,” Nature 384 (1996) 338.
D.P. Halliday, J.M. Eggleston, P.N. Adams, E.R. Holland and A.P. Monkman “A visible larg area light emitting diode fabricated from porous silicon using a conducting polyaniline contact“
W.N. Huang; K.Y. Tong; P.W Chan.“Properties of chemically etched porous polycrystalline silicon deposited by r.f. sputtering“ Electron Devices Meeting, (1996)., IEEE Hong Kong
Han, P.G.; Hei Wong; Chan, A.H.P. Poon, M.C. ”Formation mechanism of light-emitting porous silicon prepared by reactive ions etching” Electron Devices Meeting, 2001. Proceedings. IEEE Hong Kong, Page(s):13–16
J. Diana, A. Macek, D. Nižnǎnsky', I. Němec, V. Vrkoslav, T. Chvojka, I. Jeli'nek; “SEM and HRTEM study of porous silicon–relationship between fabrication, morphology and optical properties” Applied Surface Science 238 (2004) 169–174.
L. Li; Y.H. Yu; Z.X. Lin; X. Wang; S. Mandel; B. Sundarvel; E.Z. Luo; I.H Wilson.“Microstructure and optical effects of buried nano-cavities formed in silicon by hydrogen ion implantation” Ion Implantation Technology, 2000. Page(s):769–772
This work has been supported with a grant from the Iranian Ministry of Industry and partial support from the Research Council of the University of Tehran. M.D.R. gratefully acknowledges the support of the Canada Research Chairs Program and the Natural Sciences and Engineering Research Council of Canada.
About this article
Cite this article
Abdi, Y., Hashemi, P., Karbassian, F. et al. Fabrication of Nano-Crystalline Porous Silicon on Si Substrates by a Plasma Enhanced Hydrogenation Technique. MRS Online Proceedings Library 862, 191 (2004). https://doi.org/10.1557/PROC-862-A19.1