Electrolyte-Gate a-Si:H Thin Film Transistors

MRS Online Proceedings Library volume 862, Article number: 174 (2004) Cite this article

Abstract

This paper presents the fabrication and characterization of electrolyte-gate (EG) hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs). In these devices, the metal gate is replaced by a Pt electrode immersed in an electrolyte. The source-drain current of these devices is modulated by the voltage applied through the Pt electrode. Device characteristics are compared with structurally equivalent top-gate a-Si:H TFTs. The EG devices show higher mobility and smaller subthreshold slope than their counterparts with metal gate and work in a narrower voltage range. EG-TFTs show chemical sensitivity, illustrated by a voltage shift in the transfer curve as a consequence of pH variation. The sensitivity of the devices to pH is different depending on whether the top layer in contact with the electrolyte is SiCh or SiNx.

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References

  1. 1

    P. Bergveld, Sens. Actuators B. 88, 1–20 (2003).

    CAS  Article  Google Scholar 

  2. 2

    K. P. Pernstich, S. Haas, D. Oberhoff, C. Goldmann, D. J. Gundlach, B. Batlogg, A. N. Rashid and G. Shitter, J. Appl. Phys. 96 (11) 6431–6438 (2004).

    CAS  Article  Google Scholar 

  3. 3

    F. Yan, P. Estrela, Y. Mo, P. Migliorato, H. Maeda, S. Inoue and T. Shimoda, Appl. Phys. Lett. 86, 053901–1-3 (2005).

    Article  Google Scholar 

  4. 4

    J. Garrido, A. Härtl, S. Kuck, M. Stutzmann, O. A. Williams and R. B. Jackmann, Appl. Phys. Lett. 86, 073504–1-3 (2005).

    Article  Google Scholar 

  5. 5

    W. Yang and R. J. Hamers, Appl. Phys. Lett. 85 (16), 3626–3628 (2004).

    CAS  Article  Google Scholar 

  6. 6

    G. Steinhoff, M. Hermann, W. J. Schaff, L. F. Eastman, M. Stutzmann and M. Eickhoff, Appl. Phys. Lett. 83 (1), 177–179 (2003).

    CAS  Article  Google Scholar 

  7. 7

    F. Uslu, S. Ingebrandt, D. Mayer, S. Böcker-Meffert, M. Odenthal and A. Offenhäusser, Biosens. Bioelect. 19, 1723–1731 (2004).

    CAS  Article  Google Scholar 

  8. 8

    P. Bergveld, IEEE Sensor Conference, Toronto, 1–26 (2003).

    Google Scholar 

  9. 9

    L. Yin, J. Chou, W. Chung, T. Sun and S. Hsiung, IEEE Trans. Biomed. Eng. 48 (3), 340–344 (2001).

    CAS  Article  Google Scholar 

  10. 10

    H. Liao, L. Chi, J. Chou, W. Chung, T. Sun and S. Hsiung, Mat. Chem. Phys. 59, 6–11 (1999).

    CAS  Article  Google Scholar 

Download references

Acknowledgments

The authors gratefully acknowledge F. Silva, V. Soares, J. Bernardo and J. Faustino for help in sample processing. This work was supported by Fundação para a Ciência e a Tecnologia (FCT) through POCTI and POSI projects. D. Goncalves thanks FCT for her PhD grant.

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Affiliations

  1. INESC Microsistemas e Nanotecnologias (INESC-MN), Lisbon, Portugal

    Dina I. Gonçalves, Virginia Chu & João P. Conde

  2. Center of Biological and Chemical Engineering, Instituto Superior Técnico, Lisbon, Portugal

    Dina I. Gonçalves & Duarte M. Prazeres

  3. Department of Chemical Engineering, Instituto Superior Técnico, Lisbon, Portugal

    Duarte M. Prazeres & João P. Conde

Authors
  1. Dina I. Gonçalves
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  2. Duarte M. Prazeres
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  3. Virginia Chu
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  4. João P. Conde
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Correspondence to Dina I. Gonçalves.

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Gonçalves, D.I., Prazeres, D.M., Chu, V. et al. Electrolyte-Gate a-Si:H Thin Film Transistors. MRS Online Proceedings Library 862, 174 (2004). https://doi.org/10.1557/PROC-862-A17.4

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