Controlling (In,Ga)As quantum structures on high index GaAs surfaces

Abstract

We investigate the formation of (In,Ga)As self assembled quantum structures grown on different orientations of a GaAs substrate along one side of the stereographic triangle between (100) and (111)A surfaces. The samples were grown by Molecular Beam Epitaxy, monitored by Reflection High-Energy Electron Diffraction during the growth and characterized by in-situ Scanning Tunneling Microscopy and Atomic Force Microscopy. A systematic transition from zero dimensional (In,Ga)As quantum dots to one dimensional quantum wires was observed as the substrate was varied along the side of the triangle within 25o miscut from the (100) toward (111)A, which includes several high index surfaces. We propose an explanation for the role of the substrate in determining the type of the nanostructure that is formed.

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References

  1. [1]

    Z. M. Wang, H. Wen, V. R. Yazdanpanah, J. L. Shultz and G. J. Salamo, Appl. Phys. Lett. 82, 1688 (2003)

    Article  CAS  Google Scholar 

  2. [2]

    J. Platen, A. Kley, C. Setzer, K. Jacobi, P. Ruggerone, and M. Scheffler, J. Appl. Phys. 85, 3597 (1998)

    Article  Google Scholar 

  3. [3]

    V.P. Evtikhiev, A.M. Boiko, I.V. Kudryashov, A.K. Kryganovskii, R.A. Suris, A.N. Titkov, V.E. Tokranov, Semiconductor Sci. Technol. 17, 545 (2002)

    Article  CAS  Google Scholar 

  4. [4]

    W. Jiang, H. Xu, B Xu, W. Zhou, Q. Gong, D. Ding, J. Liang and Z. G. Wang, J. Vac. Sci. Technol. B 19(1), 197 (2001)

    Article  CAS  Google Scholar 

  5. [5]

    D. I. Lubyshev, P. P. Gonzalez-Borrero, E. Marega Jr. Petitprez E. and P. Basmaji, J. Vac. Sci. Technol. B 14(3), 2212 (1996)

    Article  CAS  Google Scholar 

  6. [6]

    T. Nitta, Y. Ohno, S. Shimomura, and S. Hiyamizu, J. Vac. Sci. Technol. B, 19, 1824 (2001)

    Article  CAS  Google Scholar 

  7. [7]

    X. Y. Wang, Zh. M. Wang, V. R. Yazdanpanah, G. J. Salamo and M. Xiao, J. Appl. Phys. 95, 1609 (2004)

    Article  CAS  Google Scholar 

  8. [8]

    Z. M. Wang, V. R. Yazdanpanah, J. L. Shultz, and G. J. Salamo, Appl. Phys. Lett. 81, 2965 (2002)

    Article  CAS  Google Scholar 

  9. [9]

    H. Wen, Z. M. Wang, G. J. Salamo, Appl. Phys. Lett. 84, 1756 (2004)

    Article  CAS  Google Scholar 

  10. [10]

    M. Wassermeier, J. Sudijono, M. D. Johnson, K. T. Leung, B. G. Orr, L. Daweritz and K. Ploog, Phys. Rev. B 51, 14721 (1995)

    Article  CAS  Google Scholar 

  11. [11]

    T. Yamada, H. Yamaguchi and Y. Horikoshi, J. Crystal Growth 150, 421 (1995)

    Article  CAS  Google Scholar 

  12. [12]

    J. Márquez, P. Kratzer, L. Geelhaar, K. Jacobi and M. Scheffler, Phys. Rev. Lett. 86, 115 (2001)

    Article  Google Scholar 

  13. [13]

    L. Geelhaar, J. Márquez, P. Kratzer, K. Jacobi, Phys. Rev. Lett. 86, 3815 (2001)

    Article  CAS  Google Scholar 

  14. [14]

    Sh. Seydmohamadi, Zh. M. Wang and G. J. Salamo, J. Cryst. Growth 269, 257 (2004)

    Article  CAS  Google Scholar 

Download references

Acknowledgments

We would like to acknowledge the support by the NSF Grant Number DMR-0080054. Also, we would like to thank J. L. Shultz for technical assistance.

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Correspondence to Sh. Seydmohamadi.

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Seydmohamadi, S., Wen, H., Wang, Z.M. et al. Controlling (In,Ga)As quantum structures on high index GaAs surfaces. MRS Online Proceedings Library 854, U1.8/JJ1.8/KK1.8 (2004). https://doi.org/10.1557/PROC-854-U1.8/JJ1.8/KK1.8

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