On the Formation Kinetics of Thin Nanopatterned Layers on Silicon Wafers Created by Hydrogen Plasma Exposure

MRS Online Proceedings Library volume 849, pages160–165(2004)Cite this article

Abstract

Czochralski silicon wafers which are treated by hydrogen plasma at ca. 260 °C are structured at the surface due to the high reactivity of atomic hydrogen. “Nanopatterned” (np) Si layers with average structure diameters below 100 nm are created. The thickness of the np-Si layer is on the order of 100 nm. The morphology of np-Si layers depend on the applied plasma power and the exposure time. The formation of np-Si layers is discussed in the frame of a combined etching/ redeposition mechanism. Annealing at T ≥ 800 °C causes a reconstruction of np-Si layers and the appearance of tensile stress in the wafers up to a depth of several micrometers.

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Affiliations

  1. Department of Electrical Engineering and Information Technology (LGBE), University of Hagen, D-58084, Hagen, Germany

    R. Job, Y. L. Huang, Y. Ma, B. Zölgert & W. Düngen

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  1. R. Job
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  2. Y. L. Huang
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  3. Y. Ma
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  4. B. Zölgert
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  5. W. Düngen
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Correspondence to R. Job.

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Job, R., Huang, Y.L., Ma, Y. et al. On the Formation Kinetics of Thin Nanopatterned Layers on Silicon Wafers Created by Hydrogen Plasma Exposure. MRS Online Proceedings Library 849, 160–165 (2004). https://doi.org/10.1557/PROC-849-KK7.2

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