We have measured the temperature and ion flux dependence of the ripple wavelength on a Cu(001) surface during low energy ion sputtering. We analyze these results in terms of a linear instability model and identify different experimentally observed behavior with different mechanisms of relaxation and surface defect kinetics. In a high temperature regime, diffusing species on the surface are mainly thermally induced while in a lower temperature range, the diffusing species are ion beam induced. At even lower temperature, thermal diffusion is deactivated and the surface relaxes through an athermal mechanism. We define a transition between different defects formation kinetics in temperature and flux phase space and discuss how the defect kinetics model can be extended to different materials system.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
U. Valbusa, C. Borangno, and F. B. de Mongeot, J. Phys. Condens. Matter 14, 8153 (2002).
M. A. Makeev, R. Cuerno, and A. L. Barabasi, Nucl. Instrum. Methods B 197, 185 (2002).
R. M. Bradley, J. M. E. Harper, J. Vac. Sci. Technol. A 6, 2390 (1988).
S. Rusponi, G. Costantini, C. Boragno, and U. Valbusa, Phys. Rev. Lett. 81, 2738 (1998).
C. Herring, J. Appl. Phys. 21, 301 (1950); W. W. Mullins, J. Appl. Phys. 30, 77 (1959).
M. A. Makeev and A. L. Barabasi, Appl. Phys. Lett. 71, 2800 (1997).
P. Politi, J. Villain, Phys. Rev. B 54, 5114 (1996).
W. L. Chan, N. Pavenayotin, and E. Chason, Phys. Rev. B 69, 245413 (2004).
W. L. Chan, A. Ramasubramaniam, V. Shenoy, and E. Chason, Phys. Rev. B 70, 245403 (2004).
W. L. Chan, and E. Chason, submitted.
S. van Dijken, D. de Bruin, and B. Poelsema, Phys. Rev. Lett. 86, 4608 (2001).
The authors acknowledge useful conversations with Vivek Shenoy and Ashwin Ramasubramanian and the support of USDOE under contract DE-FG02-01ER45913.
About this article
Cite this article
Chan, W.L., Chason, E. Temperature and Flux dependence of ion induced ripple: a way to study defect and relaxation kinetics during ion bombardment. MRS Online Proceedings Library 849, 142–147 (2004). https://doi.org/10.1557/PROC-849-KK6.8