A new nanowire growth technique using annealing and pulsed laser deposition is described. The technique demonstrates the control in the precise nanowire growth temperature thereby yielding higher quality nanowires than obtained from simple annealing alone. InSb substrate and gold target were used to demonstrate the new technique. The results from the variation of gold deposits from 2.5 mins to 40 mins at the fixed growth temperature of 510 oC are discussed.
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We would like to thank Dr. Alan Nicholls for his assistance in collecting HRTEM images, and diffraction patterns and use of the microscopy facilities in the Research Resources Center at the University of Illinois at Chicago. This material is based on work supported by the National Science Foundation under Grant No. ECS#0093552.
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Park, H.D., Hogan, T.P. Controlled growth of nanowires using annealing and pulsed laser deposition. MRS Online Proceedings Library 849, 109–113 (2004). https://doi.org/10.1557/PROC-849-KK5.8