InSb has a large carrier mobility and a high sensitivity in the infrared wavelength range (3–5 μm), which makes it a good quantum dot material for infrared (IR) detectors. In this study, the synthesis of the nanocrystalline III-V semiconductor indium antimonide (InSb) by solvothermal reduction methods was investigated. InSb was synthesized by using indium (III) chloride and antimony (III) chloride as the starting materials and sodium borohydride as the reducing agent. Pure-phase InSb was successfully produced with diethylenetriamine and tetraethylenepentamine as the solvents and a Schlenk line apparatus as the reaction vessel. X-ray diffraction (XRD) was used to verify the successful production of InSb and transmission electron microscopy (TEM) was used to determine the particle size and shape of the product. In the future, growth kinetics of the particles will be investigated as they relate to their spectroscopic quantum confinement effects.
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This work was supported in part by a grant from The City University of New York PSC-CUNY Research Award Program and in part by a CUNY-Collaboration grant.
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De Lezaeta, M., Lam, M., Black, S. et al. The Synthesis of III-V Semiconductor InSb Nanoparticles by Solvothermal Reduction Reactions. MRS Online Proceedings Library 848, 217–221 (2004). https://doi.org/10.1557/PROC-848-FF3.34