Fabrication of Anatase TiO2 Thin Film Using Pulsed DC Magnetron Sputtering


TiO2 thin films (500–1000 nm in thickness) were deposited using pulsed DC magnetron reactive sputtering, on glass substrates. The depositions used a Ti source in an Ar+O2 gas mixture with different parameters of power (350 - 500W), substrate temperature (no additional heat - 400°C), growth pressure (3.0 - 5.0 mTorr) and oxygen gas flow rate (6.0 - 8.0 sccm). The x-ray diffractions (XRD) show amorphous and/or anatase phases depending on the deposition conditions. The films were found to be amorphous at lower substrate temperature and at lower powers. The sample with 4 mTorr, 400W of power, a substrate temperature of 250 C with 7.0 sccm of oxygen flow has the best crystalline quality. The temperature dependent electrical conductivity measurement in air for the above films shows an exponential increase in conductivity with temperature.

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Correspondence to Ibrahim A. Al-Homoudi.

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Al-Homoudi, I.A., Zhang, L., McCullen, E.F. et al. Fabrication of Anatase TiO2 Thin Film Using Pulsed DC Magnetron Sputtering. MRS Online Proceedings Library 848, 187–192 (2004). https://doi.org/10.1557/PROC-848-FF3.20

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