Over the last decade, organic semiconductor thin film transistors have been the focus of many research groups because of their potential application in low-cost integrated circuits. Recently, an organic light-emitting field-effect transistor (OLEFET) was reported. In an OLEFET structure, optimal injection of both holes and electrons into the light-emitting layer are required for maximum quantum efficiency, whereas the gate serves as a controlling electrode. In this work, we achieved an OLFET structure with interdigitated hole-injecting Au and electron-injecting Ca contacts within a submicrometer channel length. Both contacts are bottom contacts to the upper-lying tetracene organic semiconductor. The study of IV-characteristics and light emission from these devices shined light on the underlying physics of the OLEFETs.
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This work is funded within the EU-IST-FET program under project IST-33057 (ILO). The authors want to thank R. Schmechel, M.A. Loi and M. Muccini for interesting scientific discussions. One of the authors (JR) wants to thank the Flemish IWT-fund for his scholarship.
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Reynaert, J., Cheyns, D., Janssen, D. et al. Ambipolar injection in a submicron channel light-emitting tetracene transistor with distinct source and drain contacts. MRS Online Proceedings Library 846, 713 (2004). https://doi.org/10.1557/PROC-846-DD7.13