This paper presents the results of investigations on the influence of sulfur doping on properties of gallium selenide crystals, grown by the Bridgman method from melts with sulfur content of 0.01-3 mass %, using the Hall effect, optical absorption, photoconductivity and microhardness measurements on GaSe:S. The results obtained are explained by assuming the formation of solid solutions of GaSxSe1-x and the presence of the competitive processes of point defects and structural disorder formation.
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Voevodin, V.G., Bereznaya, S.A., Korotchenko, Z.V. et al. Properties of Gallium Selenide Doped with Sulfur. MRS Online Proceedings Library 829, 443–450 (2004). https://doi.org/10.1557/PROC-829-B9.3