Towards p-type doping of ZnO by ion implantation

Abstract

Zinc oxide is a very attractive material for a range of optoelectronic devices including blue light-emitting diodes and laser diodes. Though n-type doping has been successfully achieved, p-type doing of ZnO is still a challenge that must be overcome before p-n junction devices can be realized. Ion implantation is widely used in the microelectronics industry for selective area doping and device isolation. Understanding damage accumulation and recrystallization processes is important for achieving selective area doping. In this study, As (potential p-type dopant) ion implantation and annealing studies were carried out. ZnO samples were implanted with high dose (1.4 × 1017 ions/cm2) 300 keV As ions at room temperature. Furnace annealing of samples in the range of 900oC to 1200oC was employed to achieve recrystallization of amorphous layers and electrical activation of the dopant. Rutherford backscattering/channeling spectrometry, transmission electron microscopy and cathodolumiescence spectroscopy were used to monitor damage accumulation and annihilation behavior in ZnO. Results of this study have significant implications for p-type doing of ZnO by ion implantation.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    D. C. Look, Mater. Sci. Eng., B80, 383 (2001)

    CAS  Article  Google Scholar 

  2. 2.

    C. Coskun, D. C. Look, G. C. Farlow and J. R. Sizelove, Semicond. Sci. Technol., 19, 752 (2004)

    CAS  Article  Google Scholar 

  3. 3.

    See, for example: D. C. Look, B. Clafin, Ya. I. Alivov and S. J. Park, Phys. Stat. Sol. A., 201, 2203 (2004)

    Article  Google Scholar 

  4. 4.

    D. C. Look and B. Clafin, Phys. Stat. Sol. B., 241, 624 (2004)

    CAS  Article  Google Scholar 

  5. 5.

    S. O. Kucheyev, J. S. Williams and C. Jagadish, Vacuum, 73, 93 (2004)

    CAS  Article  Google Scholar 

  6. 6.

    T. S. Jeong, M. S. Han, C. J. Youn and Y. S. Park, J. Appl. Phys., 96, 175 (2004)

    CAS  Article  Google Scholar 

  7. 7.

    T. Yamamoto, Thin Solid Films, 420–421, 100 (2002)

    Article  Google Scholar 

  8. 8.

    S. Limpijumnong, S. B. Zhang, S-H. Wei and C. H. Park, Phys. Rev. Lett., 92, 155504–1 (2004)

    Article  Google Scholar 

  9. 9.

    J. P. Biersack and L. G. Haggmark, Nucl. Instrum. Methods, 174, 257 (1980)

    CAS  Article  Google Scholar 

  10. 10.

    V. A. Coleman, H. H. Tan, C. Jagadish, S. O. Kucheyev and J. Zou, unpublished

Download references

Acknowledgments

The Australian Research Council is acknowledged for its financial support. Work at the LLNL was performed under the auspices of the U.S. DOE by University of California, LLNL under contract W-7405-Eng-48.

Author information

Affiliations

Authors

Corresponding author

Correspondence to V. A. Coleman.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Coleman, V.A., Tan, H.H., Jagadish, C. et al. Towards p-type doping of ZnO by ion implantation. MRS Online Proceedings Library 829, 382–387 (2004). https://doi.org/10.1557/PROC-829-B8.7

Download citation