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Correlation between Photoreflectance Spectra and Electrical Characteristics of InP/GaAsSb Double Heterojunction Bipolar Transistors

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Abstract

We report a photoreflectance (PR) characterization of InP/GaAsSb double-heterojunction bipolar transistor (DHBT) epitaxial wafers grown by metal-organic vapor-phase epitaxy (MOVPE). The origin of the Franz-Keldysh oscillations (FKOs) in the PR spectra was identified by step etching of the samples. FKOs from the InP emitter region were observed in the wafer with low recombination forward current at the emitter-base (E/B) heterojunction. In contrast, they did not appear when recombination current was dominant. The absence of the FKOs from the emitter indicates the high concentration of the recombination centers at the E/B heterojunction. We have also measured PR spectra from InAlP/GaAsSb/InP DHBT wafers. Pronounced FKOs from InAlP emitter reflect the suppression of recombination at E/B heterojunctions.

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Authors and Affiliations

  1. NTT Photonics Laboratories, NTT Corporation, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan

    Hiroki Sugiyama, Yasuhiro Oda, Haruki Yokoyama & Takashi Kobayashi

  2. NTT Advanced Technology Corporation, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan

    Masahiro Uchida & Noriyuki Watanabe

Authors
  1. Hiroki Sugiyama
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  2. Yasuhiro Oda
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  3. Haruki Yokoyama
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  4. Takashi Kobayashi
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  5. Masahiro Uchida
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  6. Noriyuki Watanabe
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Sugiyama, H., Oda, Y., Yokoyama, H. et al. Correlation between Photoreflectance Spectra and Electrical Characteristics of InP/GaAsSb Double Heterojunction Bipolar Transistors. MRS Online Proceedings Library 829, 308–313 (2004). https://doi.org/10.1557/PROC-829-B6.2

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  • DOI: https://doi.org/10.1557/PROC-829-B6.2

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