Spectroscopic analysis of external stresses in semiconductor quantum-well materials

Abstract

We present an approach for spectroscopic strain analysis in semiconductor quantum-well devices. This approach is applicable to all types of semiconductor materials, and to spectroscopic techniques which employ the electronic band-structure of the material, such as photoluminescence, photoreflection, photocurrent, and transmittance. The approach is based on two components, namely the theoretical calculation of the strain-sensitivity of the spectral positions of the relevant quantum-confined optical transitions within a particular quantum-well, and the spatially resolved measurement of a substantial part of the optical transition sequence within the quantum-well. The primary experimental technique applied in our approach is photocurrent spectroscopy. InAlGaAs/GaAlAs/GaAs, high-power lasers serve as the model species.

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Acknowledgments

J. Luft and M. Behringer of Osram Opto Semiconductors Regensburg, P. Hennig and D. Lorenzen of Jenoptik Laserdiode Jena, and J. Biesenbach and H. Müntz of Dilas Mainz provided high-quality diode laser devices.

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Correspondence to Jens W. Tomm.

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Tomm, J.W., Biermann, M.L., Passmore, B.S. et al. Spectroscopic analysis of external stresses in semiconductor quantum-well materials. MRS Online Proceedings Library 829, 280–289 (2004). https://doi.org/10.1557/PROC-829-B4.4

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