InAs Quantum Dots for Optoelectronic Device Applications

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Abstract

In this paper we discuss the growth of self-assembled InAs quantum dots (QDs) on both GaAs and InP substrates by low pressure Metal Organic Chemical Vapor Deposition. The influence of various growth parameters, such as the deposition time, the QD overlayer growth temperature, the V/III ratio and the group III and/or group V interdiffusion on QD formation are discussed and compared for the two systems. Stacking issues and preliminary results for an InAs/GaAs QD laser are also presented.

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References

  1. 1.

    Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).

    CAS  Article  Google Scholar 

  2. 2.

    G. Park, O. Shchekin, D. Huffaker and D. Deppe, IEEE Photon. Techn. Lett. 13, 230 (2000).

    Article  Google Scholar 

  3. 3.

    A. Stintz, G.T. Liu, H. Li, L. Lester and K.J. Malloy, IEEE Photon. Techn. Lett. 12, 590 (2000).

    Article  Google Scholar 

  4. 4.

    R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, J. Cryst. Growth 251, 248 (2003).

    CAS  Article  Google Scholar 

  5. 5.

    F. Heinrichsdorff, A. Krost, D. Bimberg, A.O. Kosogov and P. Werner, Appl. Surf. Science 123/124, 725 (1998).

    Article  Google Scholar 

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Correspondence to K. Stewart.

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Stewart, K., Barik, S., Buda, M. et al. InAs Quantum Dots for Optoelectronic Device Applications. MRS Online Proceedings Library 829, 249–256 (2004). https://doi.org/10.1557/PROC-829-B3.4

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