Fabrication of CdTe Quantum Dot Arrays on GaAs utilizng Nanoporous Alumina Masks


The uniformity and reproducibility of the CdTe QD arrays on the GaAs substrates can be improved by using a nanoporous mask. The CdTe QDs on the GaAs substrate were grown by a molecular beam epitaxy (MBE) method. The nanoporous alumina masks used for the fabrication of QD arrays have the thickness from 0.3 µm to 5 µm with the nanochannels of ~ 80 nm diameter and the pore density of ~ 1010 cm−2. When the thickness of the alumina mask used for the CdTe QD growth was about 300 nm, the CdTe QD arrays formed as a replica of the nanochannels of the mask. Smaller self-assembled CdTe QDs located randomly were produced by using the thicker nanochannel mask than 0.5 µm. The thickness of the nanochannel mask controls the size of the CdTe/GaAs QDs.

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Correspondence to Mi Jung.

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Jung, M., Lee, H.S., Park, H.L. et al. Fabrication of CdTe Quantum Dot Arrays on GaAs utilizng Nanoporous Alumina Masks. MRS Online Proceedings Library 818, 101–105 (2004). https://doi.org/10.1557/PROC-818-M11.38.1

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