Low Temperature Poly-Si TFT Technology

MRS Online Proceedings Library volume 814, pages160–167(2004)Cite this article

Abstract

Low temperature poly-Si TFT technology is reviewed and is discussed from a view point of device, fabrication process, and its possibility as FPD (Flat Panel Display) application. After the appearance of crystallization technique of SPC (Solid Phase Crystallization) using FA (Furnace Annealing) or ELA (Excimer Laser Annealing) using UV (Ultra-Violet) beam, the electronic property of poly-Si thin-film, which relates to the crystalinity of the grains, was improved drastically, and the process temperature for the TFT fabrication had been reduced below 600C down to 400C. As a result, improvement of device characteristic of poly-Si TFT such as an enhancement of carrier mobility or a reduction of leakage current has been studied intensively for the application to FPD (Flat Panel Display) on glass. Currently, extensive study is being done in order to realize a more functional SOG (System on Glass). By reducing the TFT process temperature down to 200C or below and by modifying a design for the device structure or the circuit in the pixel, O-LED (Organic LED) FPD addressed by uniform poly-Si TFTs is expected to mount on flexible plastic substrate such as on PES (PolyEtherSulphone). The poly-Si TFT has a possibility to develop as a smart system on plastic panel for unique applications as well as the conventional Si LSI in the ubiquitous IT (Information Technology) era.

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Acknowledgments

Authors would like to acknowledge to the scientists in SAIT and in Sungkyunkwan University for encouragement.

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Affiliations

  1. Sumsung Advanced Institute of Technology (SAIT), P.O. Box 111, Suwon 440-600, Kyungi, Korea

    T. Noguchi, D.Y. Kim, J.Y. Kwon, K.B. Park, J.S. Jung, W.X. Xianyu, H.X. Yin & H.S. Cho

  2. Sungkyunkwan University, Kyungi, Korea

    T. Noguchi

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  1. T. Noguchi
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  2. D.Y. Kim
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  3. J.Y. Kwon
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  4. K.B. Park
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  5. J.S. Jung
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  6. W.X. Xianyu
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  7. H.X. Yin
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  8. H.S. Cho
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Correspondence to T. Noguchi.

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Noguchi, T., Kim, D., Kwon, J. et al. Low Temperature Poly-Si TFT Technology. MRS Online Proceedings Library 814, 160–167 (2004). https://doi.org/10.1557/PROC-814-I1.4

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