Experimental Study of Etched Back Thermal Oxide for Optimization of the Si/High-k Interface

MRS Online Proceedings Library volume 811, pages61–66(2003)Cite this article

Abstract

We have demonstrated a uniform, robust interface for high-k deposition with significant improvements in device electrical performance compared to conventional surface preparation techniques. The interface was a thin thermal oxide that was grown and then etched back in a controlled manner to the desired thickness. Utilizing this approach, an equivalent oxide thickness (EOT) as low as 0.87 nm has been demonstrated on high-k gate stacks having improved electrical characteristics as compared to more conventionally prepared starting surfaces.

This is a preview of subscription content, access via your institution.

Access options

Buy single article

Instant access to the full article PDF.

US$ 39.95

Tax calculation will be finalised during checkout.

References

  1. 1.

    H.R. Huff, A. Hou, C. Lim, Y. Kim, J. Barnett, G. Bersuker, G.A. Brown, C.D. Young, P.M. Zeitzoff, J. Gutt, P. Lysaght, M.I. Gardner and R.W. Murto, Microelectronic Engineering, 69, No. 2–4 (September 2003), pp. 152–167.

    CAS  Article  Google Scholar 

  2. 2.

    H. Iwai, S. Ohmi, IEDM Conf. Proc., p.625, 2002.

    Google Scholar 

  3. 3.

    M. I. Gardner, S. Gopalan, J. Gutt, J. Peterson, H-J Li, and H.R. Huff, International Workshop of Gate Insulators, November 2003, Tokyo, Japan, p. 170

    Google Scholar 

  4. 4.

    Naim Moumen, Joel Barnett, Robert W. Murto, Mark Gardner, Byoung Hun Lee, Gennadi Bersuker and Howard R. Huff, Physics and Technology of High-K Gate Dielectrics - II, Eds. S. Electrochemical Society Proceedings Series, Pennington, NJ (2003), p. 59.

    Google Scholar 

  5. 5.

    J.R. Hauser, K. Ahmed, AIP Conf. Proc., 449, No. 1 (1998), p. 235.

    CAS  Google Scholar 

  6. 6.

    B. Foran, J. Barnett, P.S. Lysaght, M.P. Agustin, S. Stemmer, “Characterization of advanced gate stacks for Si CMOS by electron energy loss spectroscopy in scanning transmission electron microscopy” accepted for publication to the J. of Electron Spectroscopy, March, 2004.

    Google Scholar 

  7. 7.

    S. Stemmer, Z. Q. Chen, C. G. Levi, P. S. Lysaght, B. Foran, J. A. Gisby, and J. R. Taylor, Jap. J. Appl. Phys. Part 1 42, 3593 (2003).

    CAS  Article  Google Scholar 

Download references

Acknowledgments

The authors thank the people in the International SEMATECH Advanced Tool Development Facility with the help in processing of wafers.

Author information

Affiliations

  1. International SEMATECH, Austin, TX, USA

    Joel Barnett, N. Moumen, J. Gutt, M. Gardner, C. Huffman, P. Majhi, J.J. Peterson, S. Gopalan, B. Foran, H.-J. Li, B.H. Lee, G. Bersuker, P. M. Zeitzoff, G.A. Brown, P. Lysaght, C. Young, R.W. Murto & H.R. Huff

  2. IBM Assignee, USA

    N. Moumen & B.H. Lee

  3. AMD assignee, USA

    M. Gardner

  4. Texas Instruments assignee, USA

    C. Huffman & R.W. Murto

  5. Philips assignee, USA

    P. Majhi

  6. Infineon assignee, USA

    H.-J. Li

Authors
  1. Joel Barnett
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. N. Moumen
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. J. Gutt
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M. Gardner
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. C. Huffman
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. P. Majhi
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. J.J. Peterson
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. S. Gopalan
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. B. Foran
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. H.-J. Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  11. B.H. Lee
    View author publications

    You can also search for this author in PubMed Google Scholar

  12. G. Bersuker
    View author publications

    You can also search for this author in PubMed Google Scholar

  13. P. M. Zeitzoff
    View author publications

    You can also search for this author in PubMed Google Scholar

  14. G.A. Brown
    View author publications

    You can also search for this author in PubMed Google Scholar

  15. P. Lysaght
    View author publications

    You can also search for this author in PubMed Google Scholar

  16. C. Young
    View author publications

    You can also search for this author in PubMed Google Scholar

  17. R.W. Murto
    View author publications

    You can also search for this author in PubMed Google Scholar

  18. H.R. Huff
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Joel Barnett.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Barnett, J., Moumen, N., Gutt, J. et al. Experimental Study of Etched Back Thermal Oxide for Optimization of the Si/High-k Interface. MRS Online Proceedings Library 811, 61–66 (2003). https://doi.org/10.1557/PROC-811-E1.4

Download citation