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Structure of Sc2O3 Films Epitaxially Grown on α-Al2O3 (111)

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Abstract

We have characterized the structure of the epitaxial Sc2O3 films grown on a α-Al2O3 (111) substrate using molecular beam epitaxy (MBE) techniques. The Sc2O3 films grow in the bulk bixbyite phase with a very uniform thickness, and a high structural perfection. They grow with their cubic (111) axis parallel to the rhombohedral (111) axis of the sapphire substrate. The in-plane orientation of the films, however, is rotated by ±30 degrees with respect to the substrate rhombohedral axes. This is explained by the presence of two equivalent orientations of the 3-fold axis of the film on the quasi 6-fold surface of the substrate.

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Acknowledgments

We would like to acknowledge the support from the National Science Council, Taiwan, Republic of China.

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Authors and Affiliations

  1. Dept. Materials Science and Engineering, National Tsing Hua Univ., Hsin Chu, Taiwan

    A.R. Kortan, M. Hong, J. Kwo, P. Chang, C.P. Chen, J.P. Mannaerts & S.H. Liou

  2. Department of Physics, National Tsing Hua University, Hsin Chu, Taiwan

    J. Kwo

  3. Department of Physics, University of Nebraska, Lincoln, Nebraska, USA

    S.H. Liou

  4. Industrial Technology Research Institute, Hsin Chu, Taiwan

    M. Hong & J. Kwo

Authors
  1. A.R. Kortan
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  2. M. Hong
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  3. J. Kwo
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  4. P. Chang
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  5. C.P. Chen
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  6. J.P. Mannaerts
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  7. S.H. Liou
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Kortan, A., Hong, M., Kwo, J. et al. Structure of Sc2O3 Films Epitaxially Grown on α-Al2O3 (111). MRS Online Proceedings Library 811, 49–54 (2003). https://doi.org/10.1557/PROC-811-E1.2

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  • DOI: https://doi.org/10.1557/PROC-811-E1.2

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