Ozone-Based Atomic Layer Deposition of HfO2 and HfxSi1-xO2 and Film Characterization

Abstract

New ALD processes for hafnium silicate films have been developed at Aviza Technology by co-injection of tetrakis(ethylmethylamino)hafnium and tetrakis(ethylmethylamino)silicon precursors. Alternating pulses of the Hf/Si precursor vapor mixture and ozone allow process temperatures below 400°C to grow HfxSi1-xO2 films. Film characterization, including film density, crystallinity, and thermal anneal effect, was performed on five 20 nm thick HfxSi1-xO2 films where x = 0.2, 0.4, 0.6, 0.8, 1.0. X-ray measurements revealed the film densities and thicknesses for the as-deposited and 1000°C annealed samples. The densification with anneals seen in the optical measurements were confirmed. The as-deposited amorphous HfO2 and Hf0.8Si0.2O2 were crystallized after a 600°C anneal. The HfO2 formed the well known monoclinic phase while the silicate formed a face-centered-cubic (fcc) structure. This fcc phase has only recently been mentioned in the literature [1].

This is a preview of subscription content, access via your institution.

References

  1. [1]

    R.B. van Dover, M. L. Green, L. Manchanda, L. F. Schneemeyer, and T. Siegrist, Appl. Phys. Lett. 83, 1459 (2003).

    Article  Google Scholar 

  2. [2]

    G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys., 89, 5243 (2001).

    CAS  Article  Google Scholar 

  3. [3]

    Y. Senzaki, A. K. Hochberg, and J. A. T. Norman, Adv. Mater. Opt. Electron., 10, 93, (2000).

    CAS  Article  Google Scholar 

  4. [4]

    Y. Senzaki, A. K. Hochberg, and K. S. Cuthill, US Patent, 6,616,972 (2003).

  5. [5]

    A. Bastianini, G. A. Battiston, R. Gerbasi, M. Porcia, and S. Daolio, J. de Phys. IV, 5, C5–525 (1995).

    CAS  Google Scholar 

  6. [6]

    J. Schaeffer, N. V. Edwards, R. Liu, D. Roan, B. Hradsky, R. Gregory, J. Kulik, E. Duda, L. Contreras, J. Christianses, S. Zollner, P. Tobin, B.-Y. Nguyen, R. Nieh, M. Ramon, R. Rao, R. Hegde, R. Rai, J. Baker, and S. Voight, J. Electrochem. Soc., 150, F67 (2003).

    CAS  Article  Google Scholar 

  7. [7]

    Y. Senzaki, A. K. Hochberg, and J. A. T. Norman, US Patent, 6,537,613 (2003).

  8. [8]

    Y. Senzaki, A. K. Hochberg, D. A. Roberts, J. A. T. Norman, G. B. Alers, and R. M. Fleming, US Patent, 6,500,499 (2002).

  9. [9]

    T. Suntola, Thin Solid Films, 216, 84 (1992).

    CAS  Article  Google Scholar 

  10. [10]

    R. G. Gordon, J. Becker, D. Hausmann, and S. Suh, Chem. Mater., 13, 2463 (2001).

    CAS  Article  Google Scholar 

  11. [11]

    J. Gutt, G. Brown, Y. Senzaki, and S.G. Park, this conference, paper#D.2.4.

  12. [12]

    PDF#34-0104, JCPDS International Centre for Diffraction Data (2001).

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to Yoshihide Senzaki.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Senzaki, Y., Park, S., Tweet, D. et al. Ozone-Based Atomic Layer Deposition of HfO2 and HfxSi1-xO2 and Film Characterization. MRS Online Proceedings Library 811, 326–331 (2003). https://doi.org/10.1557/PROC-811-D7.4

Download citation