In this paper, we first propose an improved CVD-WSix metal gate suitable for use with nMOSFETs. Work function of CVD-WSi3.9 gate estimated from C-V measurements was 4.3eV. The nMOSFET using CVD-WSi3.9 gate electrode showed that Vth variation of L/W=1 μm/10μm nMOSFETs can be suppressed to be lower than 8mV in 22chip. In CVD-WSi3.9 gate MOSFETs with gate length of 50nm, a drive current of 636μA/μm was achieved for off-state leakage current of 35nA/μm at 1.0V of power supply voltage. By using CVD-WSi3.9 gate electrode, highly reliable metal gate nMOSFETs can be realized.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
K. Nakajima, Y. Akasaka, M. Kaneko, M. Tamaoki, Y. Yamada, T. Shimizu, Y. Ozawa and K. Suguro, 1999 Symp. on VLSI Tech., p.95
T. Saito, K. Sekine, K. Matsuo, K. Nakajima, K. Suguro and Y. Tsunashima, Jpn. J. Appl. Phys., 42, pp.L1130–1132 (2003)
K. Matsuo, O. Arisumi and K. Suguro, Ext. Abs. on SSDM, p.732–733 (2003)
S. B. Samavedam L. B. La, J. Smith, S. Dakshina-Murthy, E. Luckowski, J. Shaeffer, M. Zavala, R. Martin, V. Dhandapani, D. Triyoso, H. H. Tseng, P. J. Tobin, D. C. Glimer, C. Hobbs, W. J. Tayloe, J. M. Grant, R. I. Hegde, J. Mogab, C. Thomas, P. Abramowitz, M. Moosa, J. Conner, J. Jiang, V. Arunachalam, M. Sadd, B-Y. Nguyen and B. White, IEDM Tech. Digest 2002, pp.433–436
J. H. Lee, H. Zhong, Y-S. Suh, G. Heuss, J. Gurganus, B. Chen and V Misra, IEDM Tech. Digest 2002, p.359–362
J. Kedzierski, D. Boyd, P. Ronsheim, S. Zafar, J. Newbury, J. Ott, C. Cabral Jr., M. Ieong, W. IEDM Tech. Digest 2003, p315–318
G. Ghidini, C. Clementi, D. Drera and F. Maugain, Microelectron. Reliab., 38, pp.255–258 (1998)
About this article
Cite this article
Nakajima, K., Nakazawa, H., Sekine, K. et al. Highly Reliable Metal Gate nMOSFETs by Improved CVD-WSix films with Work Function of 4.3eV. MRS Online Proceedings Library 811, 272–277 (2003). https://doi.org/10.1557/PROC-811-D4.2