Highly Reliable Metal Gate nMOSFETs by Improved CVD-WSix films with Work Function of 4.3eV

Abstract

In this paper, we first propose an improved CVD-WSix metal gate suitable for use with nMOSFETs. Work function of CVD-WSi3.9 gate estimated from C-V measurements was 4.3eV. The nMOSFET using CVD-WSi3.9 gate electrode showed that Vth variation of L/W=1 μm/10μm nMOSFETs can be suppressed to be lower than 8mV in 22chip. In CVD-WSi3.9 gate MOSFETs with gate length of 50nm, a drive current of 636μA/μm was achieved for off-state leakage current of 35nA/μm at 1.0V of power supply voltage. By using CVD-WSi3.9 gate electrode, highly reliable metal gate nMOSFETs can be realized.

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References

  1. 1.

    K. Nakajima, Y. Akasaka, M. Kaneko, M. Tamaoki, Y. Yamada, T. Shimizu, Y. Ozawa and K. Suguro, 1999 Symp. on VLSI Tech., p.95

  2. 2.

    T. Saito, K. Sekine, K. Matsuo, K. Nakajima, K. Suguro and Y. Tsunashima, Jpn. J. Appl. Phys., 42, pp.L1130–1132 (2003)

    CAS  Article  Google Scholar 

  3. 3.

    K. Matsuo, O. Arisumi and K. Suguro, Ext. Abs. on SSDM, p.732–733 (2003)

    Google Scholar 

  4. 3.

    S. B. Samavedam L. B. La, J. Smith, S. Dakshina-Murthy, E. Luckowski, J. Shaeffer, M. Zavala, R. Martin, V. Dhandapani, D. Triyoso, H. H. Tseng, P. J. Tobin, D. C. Glimer, C. Hobbs, W. J. Tayloe, J. M. Grant, R. I. Hegde, J. Mogab, C. Thomas, P. Abramowitz, M. Moosa, J. Conner, J. Jiang, V. Arunachalam, M. Sadd, B-Y. Nguyen and B. White, IEDM Tech. Digest 2002, pp.433–436

    Google Scholar 

  5. 4.

    J. H. Lee, H. Zhong, Y-S. Suh, G. Heuss, J. Gurganus, B. Chen and V Misra, IEDM Tech. Digest 2002, p.359–362

    Google Scholar 

  6. 5.

    J. Kedzierski, D. Boyd, P. Ronsheim, S. Zafar, J. Newbury, J. Ott, C. Cabral Jr., M. Ieong, W. IEDM Tech. Digest 2003, p315–318

    Google Scholar 

  7. 6.

    G. Ghidini, C. Clementi, D. Drera and F. Maugain, Microelectron. Reliab., 38, pp.255–258 (1998)

    Article  Google Scholar 

Download references

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Correspondence to Kazuaki Nakajima.

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Nakajima, K., Nakazawa, H., Sekine, K. et al. Highly Reliable Metal Gate nMOSFETs by Improved CVD-WSix films with Work Function of 4.3eV. MRS Online Proceedings Library 811, 272–277 (2003). https://doi.org/10.1557/PROC-811-D4.2

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