The Effect of Fluorine Implantation on Boron Diffusion in Metastable Si0.86Ge0.14

Abstract

This paper investigates the effect of varying F+ implantation energy on boron thermal diffusion and boron transient enhanced diffusion (TED) in metastable Si0.86Ge0.14 by characterising the diffusion of a boron marker layer in samples with and without P+ and F+ implants. The effect of two F+ implantation energies (185keV and 42keV) was studied at two anneal temperatures 950°C and 1025°C. In samples implanted with P+ & 185keV F+, the fluorine suppresses boron transient enhanced diffusion completely at 950°C and suppresses thermal diffusion by 25% at 1025°C. In samples implanted with P+ & 42keV F+, the fluorine does not reduce boron transient enhanced diffusion at 950°C. This result is explained by the location of the boron marker layer in the vacancy-rich region of the fluorine damage profile for the 185keV implant but in the interstitial-rich region for the 42keV implant. Isolated dislocation loops are seen in the SiGe layer for the 185keV implant. We postulate that these loops are due to the partial relaxation of the metastable Si0.86Ge0.14 layer.

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References

  1. 1.

    Md. R. Hashim, R.F. Lever and P. Ashburn, Solid State Electronics 43, 131 (1999).

    CAS  Article  Google Scholar 

  2. 2.

    M.Y. Kwong, R. Kasnavi, P. Griffin, J.D. Plummer, R.W. Dutton; IEEE Trans. Electron Devices 49, 1882 (2002).

    Article  Google Scholar 

  3. 3.

    K. Ohyu, T. Itoga and N. Natsuaki, Jpn. J. Appl. Phys. 29, 457 (1990).

    CAS  Article  Google Scholar 

  4. 4.

    L.S. Robertson, P.N. Warnes, K.S. Jones, S.K. Earles, M.E. Law, D.F. Downey, S. Falk and J. Liu, Mat. Res. Soc. Symp. Proc. 610, B4.2.1 (2000).

    Google Scholar 

  5. 5.

    T.S. Shano, R. Kim, T. Hirose, Y. Furuta, H. Tsuji, M. Furuhashi and K. Taniguchi, Proc. IEDM, 37.4.1 (2001).

  6. 6.

    M. Diebel, S. Chakravarthi, C. F. Machala, S. Ekbote, A. Jain and S. T. Dunham, Mat. Res. Soc. Symp. Proc. 765, D6.15 (2003).

    Article  Google Scholar 

  7. 7.

    H.A.W. El Mubarek, P. Ashburn; App. Phys. Lett. 83, 4135 (2003).

    Article  Google Scholar 

  8. 8.

    K. Liu, J. Wu, J. Chen, A. Jain; IEEE Electron Device Letters 24, 180 (2003).

    CAS  Article  Google Scholar 

  9. 9.

    E. Kasper and H. J. Herzog, Thin Solid Films 44, 357(1977).

    CAS  Article  Google Scholar 

  10. 10.

    M. D. Giles, J. Electrochem. Soc. 138, 1160 (1991)

    CAS  Article  Google Scholar 

Download references

Acknowledgments

EPSRC is acknowledged for funding this work.

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Correspondence to Huda A. W. A. El Mubarek.

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El Mubarek, H.A.W.A., Wang, Y., Bonar, J.M. et al. The Effect of Fluorine Implantation on Boron Diffusion in Metastable Si0.86Ge0.14. MRS Online Proceedings Library 810, 374–379 (2003). https://doi.org/10.1557/PROC-810-C8.15

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