Modeling B clustering in Si and SiGe

Abstract

Our experiments show boron-interstitial cluster dissolution is reduced during oxidation, a behavior not predicted by the current models. Both our experiments and others on the time dependence indicate the reactivation is coming from more than one cluster. Since oxidation induced interstitial injection reduces reactivation, one of the significant clusters has to release an interstitial release during dissolution. Recent ab-initio calculations provide a qualitatively different B clustering model, with two significant cluster species. Based on these energetics, we have developed a new physically based model that for the first time accounts for the experimentally observed cluster dissolution time and ambient dependence.

Anomalous B diffusion behavior is also observed in an investigation of Ge influence on B diffusion. Silicon wafers were subjected to a Si preamorphization implant (PAI), followed by Ge and B implants contained within the existing amorphous layer. The control sample received only Si PAI and B implant. Upon annealing, the peak of the B profile shifts towards the surface and increases in magnitude, exhibiting uphill diffusion. The control samples subjected to the same thermal processing exhibit TED, but no uphill diffusion behavior. This is consistent with the model of B diffusion in Si1−xGex, accounting for trapping of B at Ge sites through formation of GeB complex.

This is a preview of subscription content, access via your institution.

References

  1. 1

    D. J. Eaglesham, P. A. Stolk, H.-J. Gossmann, and J. M. Poate, Appl. Phys. Lett. 65, 2305 (1994)

    CAS  Article  Google Scholar 

  2. 2

    K.S. Jones, J. Liu, and L. Zhang, Proceedings of Spring Electrochemical Soc. Meeting, 96–4, 116 (1996)

    Google Scholar 

  3. 3

    P. A. Stolk, H. J. Gossmann, D. J. Eaglesham, D. C. Jacobson, and J. M. Poate, Appl. Phys. Lett. 66, 568 (1995)

    CAS  Article  Google Scholar 

  4. 4

    R. F. Lever, J. M. Bonar, A. F. W. Willoughby, J. Appl. Phys. 83, 1988 (1998)

    CAS  Article  Google Scholar 

  5. 5

    N. R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, and A. Nylandsted Larsen, J. Appl. Phys. 94, 3883 (2003)

    CAS  Article  Google Scholar 

  6. 6

    L. Pelaz, V. C. Venezia, H.-J. Gossmann, G. H. Gilmer, A. T. Fiory, C. S. Rafferty, M. Jaraiz, and J. Barbolla, Appl. Phys. Lett. 75, 662 (1999)

    CAS  Article  Google Scholar 

  7. 7

    S. M. Hu, J. Appl. Phys. 45, 1567 (1974)

    CAS  Article  Google Scholar 

  8. 8

    Lj. Radic, A. D. Lilak, and M. E. Law, Appl. Phys. Lett. 81, 826 (2002)

    CAS  Article  Google Scholar 

  9. 9

    S. Solmi, M. Bersani, M. Sbetti, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl. Phys 88, 4547 (2000)

    CAS  Article  Google Scholar 

  10. 10

    K. S. Jones, R. G. Elliman, M. M. Petravi, and P. Kringhøj, Appl. Phys. Lett. 68, 3111 (1996)

    CAS  Article  Google Scholar 

  11. 11

    X.-Y. Liu, W. Windl, and M. P. Masquelier, Appl. Phys. Lett. 77, 2018 (2000).

    CAS  Article  Google Scholar 

  12. 12

    FLorida Object Oriented Process Simulator, University of Florida, Florida 2002.

  13. 13

    UT-Marlowe version 5.0, University of Texas, Austin, Texas 2000.

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to Ljubo Radic.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Radic, L., Lilak, A.D. & Law, M.E. Modeling B clustering in Si and SiGe. MRS Online Proceedings Library 810, 368–373 (2003). https://doi.org/10.1557/PROC-810-C8.14

Download citation