Accurate Monte Carlo Simulation of Ion Implantation into Arbitrary 1D/2D/3D Structures for Silicon Technology

MRS Online Proceedings Library volume 810, pages316–321(2003)Cite this article

Abstract

We present an integrated Monte Carlo implant simulator which is capable of accurately simulating ion implantation into any amorphous materials and crystalline Si for 1D/2D/3D structures with arbitrary geometry and topography. With this simulator, we investigate some practical examples which reveal interesting 2D/3D effects, and demonstrate the importance of <110> channeling for sub-100nm silicon technology.

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Affiliations

  1. Synopsys, Inc., 14911 Quorum Dr., Dallas, Texas, 75254, USA

    Shiyang Tian

  2. Synopsys, Inc., 700 East Middlefield Road, Mountain View, CA, 94043, USA

    Victor Moroz & Norbert Strecker

Authors
  1. Shiyang Tian
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  2. Victor Moroz
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  3. Norbert Strecker
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Correspondence to Shiyang Tian.

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Tian, S., Moroz, V. & Strecker, N. Accurate Monte Carlo Simulation of Ion Implantation into Arbitrary 1D/2D/3D Structures for Silicon Technology. MRS Online Proceedings Library 810, 316–321 (2003). https://doi.org/10.1557/PROC-810-C6.5

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