Accurate Monte Carlo Simulation of Ion Implantation into Arbitrary 1D/2D/3D Structures for Silicon Technology


We present an integrated Monte Carlo implant simulator which is capable of accurately simulating ion implantation into any amorphous materials and crystalline Si for 1D/2D/3D structures with arbitrary geometry and topography. With this simulator, we investigate some practical examples which reveal interesting 2D/3D effects, and demonstrate the importance of <110> channeling for sub-100nm silicon technology.

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  1. [1]

    B. Obradovic, G. Wang, Y. Chen, D. Li, C. Snell, and A. F. Tasch, UT-MARLOWE 5.0 with TOMCAT. The University of Texas at Austin, Austin, Texas, 1999.

    Google Scholar 

  2. [2]

    G. Hobler, A. Simionescu, L. Palmetshofer, C. Tian, and G. Stingeder, J. Appl. Phys. 77, 3697 (1995).

    CAS  Article  Google Scholar 

  3. [3]

    M. Posselt, Rad. Effs. and Defs. in Solids 130–131, 87 (1994).

    Article  Google Scholar 

  4. [4]

    B. Schmidt, M. Posselt, N. Strecker, and T. Feudel, Comp. Mat. Sci. 11, 87 (1998).

    CAS  Article  Google Scholar 

  5. [5]

    D. Li, L. Lin, G. Wang, Y. Chen, G. Shrivastav, S. Oak, A. F. Tasch, S. K. Banerjee, IEDM Tech. Dig., pp. 38.6.1–4, 2001.

    Google Scholar 

  6. [6]

    A. Hoessinger, PhD thesis, Technical University Vienna, 2000.

  7. [7]

    J. O. Borland, V. Moroz, H. Wang, W. Maszara, and H. Iwai, Solid State Technol., p. 52, June 2003.

    Google Scholar 

  8. [8]

    Synopsys, Inc., Mountain View, CA, Taurus Process Reference Manual, December 2003.

  9. [9]

    S. Tian, J. Appl. Phys. 93, 5893 (2003). S. Tian, Nucl. Instr. Meth. Phys. Res. B 215, 403 (2004).

    CAS  Article  Google Scholar 

  10. [10]

    S.-H. Yang, D. Lim, S. J. Morris, and A. F. Tasch, Nucl. Instr. Meth. Phys. Res. B 102, 242 (1995).

    CAS  Article  Google Scholar 

  11. [11]

    W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, and S. Selberherr, IEEE Trans. Semicond. Manu. 8, 402 (1995).

    Article  Google Scholar 

  12. [12]

    K. M. Beardmore and N. Grønbech-Jensen, Nucl. Instr. Meth. Phys. Res. B 153, 391 (1999).

    CAS  Article  Google Scholar 

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Correspondence to Shiyang Tian.

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Tian, S., Moroz, V. & Strecker, N. Accurate Monte Carlo Simulation of Ion Implantation into Arbitrary 1D/2D/3D Structures for Silicon Technology. MRS Online Proceedings Library 810, 316–321 (2003).

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