Effect of Ge-rich Si1−zGez Segregation on the Morphological Stability of NiSi1−uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer


The germanosilicidation of Ni on strained (001) Si0.8Ge0.2, particularly Ge segregation, grain boundary grooving, and surface morphology, during rapid thermal annealing (RTA) was studied. High-resolution cross-sectional transmission electron microscopy (HRXTEM) suggested that Ge-rich Si1−zGez segregation takes place preferentially at the germanosilicide/Si1−xGex interface, more specifically at the triple junctions between two adjacent NiSi1−uGeu grains and the underlying epi Si1−xGex, and it is accompanied with thermal grooving process. The segregation process accelerates the thermal grooving of NiSi1−uGeu grain boundaries at the interface. The segregation-accelerated grain boundary grooving has significant effect on the surface morphology of NiSi1−uGeu films in Ni-SiGe system.

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Yao, H., Chi, D., Tripathy, S. et al. Effect of Ge-rich Si1−zGez Segregation on the Morphological Stability of NiSi1−uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer. MRS Online Proceedings Library 810, 237–242 (2003). https://doi.org/10.1557/PROC-810-C4.7

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