Effect of Ge-rich Si1−zGez Segregation on the Morphological Stability of NiSi1−uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer

Abstract

The germanosilicidation of Ni on strained (001) Si0.8Ge0.2, particularly Ge segregation, grain boundary grooving, and surface morphology, during rapid thermal annealing (RTA) was studied. High-resolution cross-sectional transmission electron microscopy (HRXTEM) suggested that Ge-rich Si1−zGez segregation takes place preferentially at the germanosilicide/Si1−xGex interface, more specifically at the triple junctions between two adjacent NiSi1−uGeu grains and the underlying epi Si1−xGex, and it is accompanied with thermal grooving process. The segregation process accelerates the thermal grooving of NiSi1−uGeu grain boundaries at the interface. The segregation-accelerated grain boundary grooving has significant effect on the surface morphology of NiSi1−uGeu films in Ni-SiGe system.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    T. Morimoto, H.S. Momose, T. Linuma, I. Kunishima, K. Suguro, H. Okano, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumate, and H. Iwai, Tech. Dig. Int. Electron. Devices Meet (1991), pp. 654.

    Google Scholar 

  2. 2.

    S.-L. Zhang, Microelectron. Eng. 70 (2-4), 174 (2003).

    CAS  Article  Google Scholar 

  3. 3.

    K. L. Pey, W. K. Choi, S. Chattopadhyay, H. B. Zhao, E. A. Fitzgerald, D. A. Antoniadis, and P. S. Lee, J. Vac. Sci. Technol. A 20, 1903 (2002).

    CAS  Article  Google Scholar 

  4. 4.

    T. Jarmar, J. Seger, F. Ericson, D. Mangelinck, U. Smith, and S.-L. Zhang, J. Appl. Phys. 92, 7193 (2002).

    CAS  Article  Google Scholar 

  5. 5.

    J. Seger, S.-L. Zhang, D. Mangelinck, and H. H. Radamson, Appl. Phys. Lett. 81, 1978 (2002).

    CAS  Article  Google Scholar 

  6. 6.

    J. Seger, and S.-L. Zhang, Thin Solid Films 429, 216 (2003).

    CAS  Article  Google Scholar 

  7. 7.

    L. J. Chen, J. B. Lai, and C. S. Lee, Micron 33, 535 (2002).

    CAS  Article  Google Scholar 

  8. 8.

    T. H. Yang, G. L. Luo, E. Y. Chang, T. Y. Yang, H. C. Tseng, and C. Y. Chang, IEEE Electron Dev. Lett. 24 (9), 544 (2003).

    CAS  Article  Google Scholar 

  9. 9.

    C. Y. Lin, W. J. Chen, C. H. Lai, Albert Chin, and J. Liu, IEEE Electron Dev. Lett. 23 (8), 464 (2002).

    CAS  Article  Google Scholar 

  10. 10.

    Jian-Shing Luo, Wen-Tai Lin, C. Y. Chang, P. S. Shih, and F. M. Pan, J. Vac. Sci. Technol. A 18, 143 (2000).

    CAS  Article  Google Scholar 

  11. 11.

    Jian-Shing Luo, Wen-Tai Lin, C. Y. Chang, and W. C. Tsai, Mater. Chem. Phys. 54, 160 (1998); J. Appl. Phys. 82, 3621 (1997).

    CAS  Article  Google Scholar 

  12. 12.

    J. S. Luo, W. T. Lin, C. Y. Chang, P. S. Shih, Nuclear Instr. Methods B. 169, 124 (2000).

    CAS  Article  Google Scholar 

  13. 13.

    Z. H. Jin, G. A. Bhat, M. Yeung, H. S. Kwok, and M. Wong, Japn. J. Appl. Phys. Part 2-Lett. 36 (12B), L1637 (1997).

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to H.B. Yao.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Yao, H., Chi, D., Tripathy, S. et al. Effect of Ge-rich Si1−zGez Segregation on the Morphological Stability of NiSi1−uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer. MRS Online Proceedings Library 810, 237–242 (2003). https://doi.org/10.1557/PROC-810-C4.7

Download citation