Materials Challenges for CMOS Junctions

Abstract

Against a backdrop of the latest ITRS predictions for CMOS junctions, we compare methods for dopant introduction and activation, methods for making contact to these regions, and methods for measurement of material and device properties. As activation without diffusion (sub-melt laser, capacitor discharge flash, or solid phase epitaxy) becomes more feasible, the burden on Xj, Rsh and abruptness falls on the implanters, and the process margin appears slim, opening the door for other methods of doping. For contact resistance, a major component of transistor parasitics, we find that either a move to a different substrate, or from a single midgap silicide to two band-edge metals/silicides can be quite beneficial. Through the use of simple test structures, we describe a means of extracting each component of the parasitic resistance, facilitating development of materials for CMOS junctions.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    Semiconductor Industry Association, International Technology Roadmap for Semiconductors, San Jose, CA, 2003 http://public.itrs.net/Files/2003ITRS/Home2003.htm

  2. 2.

    H.-J. Gossmann, supporting notes for Lateral Abruptness, of Ref. [1].

  3. 3.

    M.Y. Kwong, R. Kasnavi, P. Griffin, J.D. Plummer, R.W. Dutton, IEEE Trans. Elect. Dev. 49, 1882 (2002).

    Article  Google Scholar 

  4. 4.

    D. Villanueva, A. Pouydebasque, E. Robilliart, T. Skotnicki, E. Fuchs, H. Jaouen, in International Electron Devices Meeting Technical Digest 2003, p.237 (2003).

    Google Scholar 

  5. 5.

    K. Goto, J. Matsuo, K Tada, T. Sugii, I. Yamada, IEEE Trans. Electr. Dev. 46, 683 (1999).

    Article  Google Scholar 

  6. 6.

    K.K. Bourdelle, A. Agarwal, A.S. Perel, Electron. Lett. 39, 807 (2003)

    CAS  Article  Google Scholar 

  7. 7.

    D. Lenoble, A. Grouillet; F. Boeuf; T. Skotnicki; D. Hacker; J. Scheuer, S. Walther, B. Brown, T. Alford, M. Nastasi, M. Vella, 14th International Conference on Ion Implantation Technology Proceedings (IEEE Cat. No.02EX505) p.36(2003)

    Google Scholar 

  8. 8.

    C. Zhao (personal communication).

  9. 9.

    R. Lindsay, S. Severi, B. J. Pawlak, K. Henson, A. Lauwers, X. Pages, A. Satta, R. Surdeanu, H. Lendzian, K. Maex, in Extended Abstracts of Fourth International Workshop on Junction Technology, edited by X.-P. Qu, G.-P. Ru, B.-Z. Li, B. Mizuno, H. Iwai, (Fudan Univ. Press, Shanghai, 2003) p. 70.

  10. 10.

    W.J. Taylor, M. Orlowski, D.C. Gilmer, P.V. Alluri, C.C. Hobbs, M.J. Rendon, I.R. Clejan, U.S. Patent No. 6573160 (3 June 2003)

  11. 11.

    M.C. Ozturk, J. Liu, H. Mo, in International Electron Devices Meeting Technical Digest 2003, p.497 (2003).

    Google Scholar 

  12. 12.

    T. Ghani, M. Armstrong, C. Auth, M. Bost, P. Charvat, G. Glass, T. Hoffmann, K. Johnson, C. Kenyon, J. Klaus, B. McIntyre, K. Mistry, A. Murthy, J. Sandford, M. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, S. Thompson, M. Bohr, in International Electron Devices Meeting Technical Digest 2003, p.978 (2003).

    Google Scholar 

  13. 13.

    Allen L.P.; Caliendo S.; Hofmeester N.; Harrington E.; Walsh M.; Tabat M.; Tetreault T.G.; Degenkolb E.; Santeufemio C., 2002 IEEE International SOI Conference. Proceedings (Cat. No.02CH37347) p.192–3 2002

    Google Scholar 

  14. 14.

    Fenner D.B.; Hautala J.; Allen L.P.; Greer J.A.; Skinner W.J.; Budnick J.I.; Daniels B.J.; Nolan T.P.; Seigler M.A.; Wang S.X.; C.B. Murray Magnetic Materials, Structures and Processing for Information Storage. Symposium (Materials Research Society Symposium Proceedings Vol.614) p.F10.3.1–6 2001

    Google Scholar 

  15. 15.

    Toyoda N.; Matsui S.; I. Yamada Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes & Review Papers) vol.41, no.6B p.4287–90 June 2002

    Google Scholar 

  16. 16.

    Toyoda N.; Yamada I.; Brown B.; Alford T.L.; Nastasi M.; Vella M.C. 2002 14th International Conference on Ion Implantation Technology Proceedings (IEEE Cat. No.02EX505) p.701–4 2003

    Google Scholar 

  17. 17.

    J.O. Borland, J. Hautala, M. Tabat, M. Gwinn, T. Tetreault, W. Skinner, to be published Sol. St. Tech. May, 2004.

    Google Scholar 

  18. 18.

    Fenner D.B.; Dean D.W.; DiFilippo V.; Allen L.P.; Hautala J.; P.B. Mirkarimi Ion Beam Synthesis and Processing of Advanced Materials. Symposium. (Materials Research Society Symposium Proceedings Vol.647) p.O5.2.1–6 2001

    Google Scholar 

  19. 19.

    W.R. Thurber, R.L. Mattis, Y.M. Liu, National Bureau of Standards Special Publication 400–64, 42 (1981)

    Google Scholar 

  20. 20.

    William J. Taylor, Jr., James Smith, Jen-Yee Nguyen, Raghaw Rai, Olubunmi Adetutu, James Geren, Juan Ybarra, David Petru, in ULSI Process Integration III, edited by C.I. Claeys (Electrochemical Society, Pennington, NJ, 2003) pg. 278.

  21. 21.

    W.J. Taylor, E. Verret, C. Capasso, J.-Y. Nguyen, L.B. La, E. Luckowski, A. Martinez, C. Happ, J. Schaeffer, M. Raymond, P. Tobin in Extended Abstracts of Fourth International Workshop on Junction Technology, edited by X.-P. Qu, G.-P. Ru, B.-Z. Li, B. Mizuno, H. Iwai, (Fudan Univ. Press, Shanghai, 2003) p. 107.

  22. 22.

    C.M. Osburn and K.R. Bellur, Thin Solid Films 332, (1998) 428.

    CAS  Article  Google Scholar 

  23. 23.

    P.H. Keys, H.-J. Gossmann, K.K. Ng, C.S. Rafferty, Superlattices and Microstructures 27, 125 (1999).

    Article  Google Scholar 

  24. 24.

    S.D. Kim, C.-M. Park, and J.C.S. Woo, International Electron Devices Meeting Tech. Digest., (2000) p. 723

  25. 25.

    M.C. Ozturk, J. Liu, H. Mo, N. Pesovic in International Electron Devices Meeting Technical Digest 2002, p.375 (2002).

  26. 26.

    L. Gutai, IEEE Trans. Elect. Dev. 37, (1990) 2350

    Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to William J. Taylor.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Taylor, W.J., Rendon, M.J., Verret, E. et al. Materials Challenges for CMOS Junctions. MRS Online Proceedings Library 810, 74–85 (2003). https://doi.org/10.1557/PROC-810-C1.1

Download citation