The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer

Abstract

In advanced CMOS technology nodes one may achieve further enhancement of device performance by carrier mobility modification in the transistor channel. The carrier mobility enhancement can be realized by formation of strained silicon layers on a Si1−xGex strain relaxed buffer. Formation of source and drain extensions on such structures need to satisfy one additional requirement, the formation process, including the activation related thermal budget should not relax the strain in the channel. In this paper we separately investigate the role of amorphization during implantation, different doping impurities and thermal budget on the junction and the transistor channel regions properties. Two approaches of dopant activation are discussed: low temperature solid phase epitaxial regrowth and high temperature conventional spike.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    B.J. Pawlak, R. Lindsay, R. Surdeanu, P. Stolk, K. Maex, X. Pages, Ion Implantation Technology Conference Proceedings, 21 (2002).

  2. 2.

    B.J. Pawlak, R. Lindsay, R. Surdeanu, X. Pages, W. Vandervorst, K. v.d. Jeugd, Electrochem. Soc. Symp. Proc. 2003-14, 99 (2003).

  3. 3.

    V.I. Kuznetsov, A.B. Storm, G.J. Snijders, C. de Ridder, T.A.M. Ruijl, J.C.G vd Sanden, E.H.A Granneman, Electrochem. Soc. Symp. Proc. 2000-9, 401 (2000).

    Google Scholar 

  4. 4.

    B.J. Pawlak, R. Lindsay, R. Surdeanu, B. Dieu, L. Geenen, I. Hoflijk, O. Richard, R. Duffy, T. Clarysse, B. Brijs, W. Vandervorst, C.J.J. Dachs, J. Vac. Sci. Technol. B 22, 297 (2004).

    Article  Google Scholar 

  5. 5.

    R. Lindsay, K. Henson, W. Vandervorst, K. Maex, B.J. Pawlak, R. Duffy, R. Surdeanu, P. Stolk, J.A. Kittl, S. Giangrandi, X. Pages, K. van der Jeugd, J. Vac. Sci. Technol. B 22, 306 (2004).

    Article  Google Scholar 

  6. 6.

    B.J. Pawlak, R. Surdeanu, B. Colombeau, A.J. Smith, N.E.B. Cowern, R. Lindsay, W. Vandervorst, B. Brijs, O. Richard, F. Cristiano, Appl. Phys. Lett. 84, (2055) 2004.

    Google Scholar 

  7. 7.

    B. Colombeau, A.J. Smith, N.E.B. Cowern, B.J. Pawlak, F. Cristiano, R. Duffy, A. Claverie, C.J. Ortiz, P. Pichler, E. Lampin, C. Zechner, paper in these proceedings.

  8. 8.

    R.T. Crosby, K.S. Jones, M.E. Law, A. Nylandsted Larsen, A. Nylandsted Larsen, Mat. Sci. Semicond. Processing 6, 205 (2003)

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to B.J. Pawlak.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Pawlak, B., Vandervorst, W., Lindsay, R. et al. The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer. MRS Online Proceedings Library 809, 96 (2003). https://doi.org/10.1557/PROC-809-B9.6.1/C9.6

Download citation