High-Performance SiGe MODFET Technology

Abstract

An overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO2 inversion layers. Next, previous results on high-performance n- and p-MODFETs fabricated at IBM and elsewhere are reviewed, followed by recent results on laterally-scaled Si/SiGe n-MODFETs with gate lengths as small as 70 nm. We conclude with a discussion of the materials issues for the future vertical and lateral scaling of SiGe MODFETs.

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Acknowledgments

The authors would like to acknowledge the support of DARPA, under SPAWAR contract No. N66001-00-C-8086 and ONR, under SPAWAR contract No. N66001-99-C-6000. The authors would also like to acknowledge Roy Carruthers, Phil Saunders, James Bucchignano, Michael Rooks, and the MRL and ASTC fabrication facilities for technical support.

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Koester, S.J., Chu, J.O., Saenger, K.L. et al. High-Performance SiGe MODFET Technology. MRS Online Proceedings Library 809, 72 (2003). https://doi.org/10.1557/PROC-809-B7.2

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