Abstract
Virtual substrates with ultra-thin SiGe strain relaxed buffers have been grown on Si substrates by a method employing point defect supersaturation in the growing layers. A concept of the point defect influence on the strain relaxation and on defect interactions in layers has been proposed. A method is developed to increase the degree of relaxation in sub-100 nm SiGe buffer layers and to provide a smooth surface morphology. Layer growth has been realized by solid source molecular beam epitaxy in a chamber equipped with an in situ monitoring system. One of the growth stages, performed at a very low temperature, serves the generation of point defects. Strain relaxation tunable up to the high degree and a crosshatch-free surface morphology are demonstrated in 40nm thick SiGe buffers which contain 40-45% Ge.
Growth monitoring enables the control of the process window and the layer crystallization by a chosen mechanism.
Virtual substrates produced by the described method were successfully tested in nMODFET structures.
Similar content being viewed by others
References
F. Aniel, M. Enciso-Aguilar, L. Giguerre, P. Crozat, R. Adde, T. Mack, U. Seiler, Th. Hackbarth, H.-J. Herzog, U. König, B. Raynor, Solid-State Electronics 47, 283 (2003)
E. Kasper, K. Lyutovich, Solid-State Electronics (2004), 48, 1257–1263 (2004)
E. Kasper, K. Lyutovich, M. Bauer, M. Oehme, Thin Solid Films 336, 319–322 (1998)
M. Bauer, K. Lyutovich, M. Oehme, E. Kasper, H.-J. Herzog, F. Ernst, Thin Solid Films 369, 152–156 (2000)
J.W. Matthews, A.E. Blakeslee, J. Cryst. Growth 29, 126 (1975)
R. People, J.C. Bean, Appl Phys Lett 47, 322–324 (1985) Erratum: Appl Phys Lett 49, 229 (1986)
T.S. Perova, R. Maurice, R.A. Moore, K. Lyutovich, C.P. Parry, M. Bauer, E. Kasper, J. Mater. Sci.: Materials in Electronics 14, 441–444 (2003)
K. Lyutovich, M. Bauer, E. Kasper, H.-J. Herzog, T. Perova, R. Maurice, C. Hofer, C. Teichert, Mater. Sci. and Engin. B89, 341–345 (2002)
E. Kasper, H.-J. Herzog, H. Daembkes, G. Abstreiter, Mat. Res. Soc. Symp. Proc. 56, 347 (1986)
K. Lyutovich, M. Oehme, F. Ernst, Euro Phys J. Appl. Phys. (2004), in press.
Acknowledgments
Authors thank Deutsche Forschungsgemeinschaft for financial support (project KA 1229/5-3).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Lyutovich, K., Kasper, E. & Oehme, M. Ultra-thin strain relaxed SiGe buffer layers with 40% Ge. MRS Online Proceedings Library 809, 14 (2003). https://doi.org/10.1557/PROC-809-B1.4
Published:
DOI: https://doi.org/10.1557/PROC-809-B1.4