Modulation of Arsenic Incorporation in GaN Layers Grown by Molecular Beam Epitaxy

Abstract

GaN layers periodically-doped with arsenic were grown by plasma-assisted molecular beam epitaxy on sapphire substrates. Secondary ion mass spectroscopy studies using different secondary ions clearly confirmed the existence of As-modulation in the GaN/GaN:As periodically-doped structures, however, the degree of As-modulation is still under discussion. The use of modulation doping with As has a strong influence on the optical properties of GaN/GaN:As structures.

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Acknowledgments

This work was undertaken with support from EPSRC (GR/R46465).

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Correspondence to S. V. Novikov.

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Novikov, S.V., Zhao, L.X., Foxon, C.T. et al. Modulation of Arsenic Incorporation in GaN Layers Grown by Molecular Beam Epitaxy. MRS Online Proceedings Library 798, 736–741 (2003). https://doi.org/10.1557/PROC-798-Y8.4

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