Modulation of Arsenic Incorporation in GaN Layers Grown by Molecular Beam Epitaxy

MRS Online Proceedings Library volume 798, pages736–741(2003)Cite this article

Abstract

GaN layers periodically-doped with arsenic were grown by plasma-assisted molecular beam epitaxy on sapphire substrates. Secondary ion mass spectroscopy studies using different secondary ions clearly confirmed the existence of As-modulation in the GaN/GaN:As periodically-doped structures, however, the degree of As-modulation is still under discussion. The use of modulation doping with As has a strong influence on the optical properties of GaN/GaN:As structures.

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Acknowledgments

This work was undertaken with support from EPSRC (GR/R46465).

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Affiliations

  1. School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK

    S. V. Novikov, L. X. Zhao & C. T. Foxon

  2. Ioffe Physical-Technical Institute, St. Petersburg, 194021, Russia

    S. V. Novikov, B. Ja. Ber & A. P. Kovarsky

  3. School of Electrical and Electronic Engineering, University of Nottingham, Nottingham, NG7 2RD, UK

    I. Harrison

  4. School of Mechanical, Materials, Manufacturing Engineering and Management, University of Nottingham, Nottingham, NG7 2RD, UK

    M. W. Fay & P. D. Brown

Authors
  1. S. V. Novikov
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  2. L. X. Zhao
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  3. C. T. Foxon
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  4. B. Ja. Ber
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  5. A. P. Kovarsky
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  6. I. Harrison
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  7. M. W. Fay
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  8. P. D. Brown
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Correspondence to S. V. Novikov.

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Novikov, S.V., Zhao, L.X., Foxon, C.T. et al. Modulation of Arsenic Incorporation in GaN Layers Grown by Molecular Beam Epitaxy. MRS Online Proceedings Library 798, 736–741 (2003). https://doi.org/10.1557/PROC-798-Y8.4

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