We have investigated high-power characteristics of GaN/InGaN double heterojunction bipolar transistors on SiC substrates grown by metalorganic vapor phase epitaxy. The p-InGaN extrinsic base layers were regrown to improve ohmic characteristics of the base. Base-collector diodes showed low leakage current at their reverse bias voltages due to a wide bandgap of a GaN collector, resulting in a high-voltage transistor operation. A 90 μm × 50 μm device operated up to a collector-emitter voltage of 28 V and a collector current of 0.37 A in its common-emitter current-voltage characteristics at room temperature, which corresponds to a DC power of 10.4 W. A collector current density and a power density are as high as 8.2 kA/cm2 and 230 kW/cm2, respectively. These results show that nitride HBTs are promising for high-power electronic devices.
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We thank Dr. Toshio Nishida for his fruitful discussions. We also thank Mr. Masahiro Kashiwa, Mr. Takatoshi Kido, and Prof. Nobuo Matsumoto of the Shonan Institute Technology for device fabrication. We are grateful to Dr. Yoshiro Hirayama and Dr. Hideaki Takayanagi for their encouragement throughout this work.
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Makimoto, T., Yamauchi, Y. & Kumakura, K. High-Power Characteristics of GaN/InGaN Double Heterojunction Bipolar Transistors with a Regrown p-InGaN Base Layer. MRS Online Proceedings Library 798, 707–712 (2003). https://doi.org/10.1557/PROC-798-Y7.4